An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

A semiconductor laminate includes a substrate composed of InP, a first buffer layer composed of InP containing less than 1×10.sup.21 cm.sup.−3 Sb and disposed on the substrate, and a second buffer layer composed of InGaAs and disposed on the first buffer layer. The first buffer layer includes a first layer that has a higher concentration of Sb than the substrate and that is arranged to include a first main surface which is a main surface of the first buffer layer on the substrate side. The second buffer layer includes a second layer that has a lower concentration of Sb than the first layer and that is arranged to include a second main surface which is a main surface of the second buffer layer on the first buffer layer side.

An imaging apparatus is configured of a first structure 20 and a second structure 40, in which the first structure 20 includes a first substrate 21, a plurality of temperature detection devices 15 formed on the first substrate 21 and configured to detect a temperature on the basis of an infrared ray, drive lines 72, and signal lines 71, the second structure 40 includes a second substrate 41, and a drive circuit provided on the second substrate 41 and covered with a covering layer 43, the first substrate 21 is bonded to the covering layer 43, a cavity 50 is provided between each temperature detection device 15 and the covering layer 43, and the drive lines 72 and the signal lines 71 are electrically connected to the drive circuit.

The present technology relates to a solid-state image sensor, a photoelectric conversion film, an electron blocking layer, an imaging apparatus, and an electronic device that can appropriately photoelectrically convert light of specific wavelengths with high spectral characteristics and high photoelectric conversion efficiency. A photoelectric conversion layer or an electron blocking layer is configured with a photoelectric conversion film made of only a compound represented by Chemical Formula (1). ##STR00001##
The present technology can be applied to a solid-state image sensor.

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

Provided is a texture structure manufacturing method with which a texture structure can be obtained simply. The texture structure manufacturing method comprises: growing a layer including a randomly distributed nanostructure on a major surface of a base material; forming a light-scattering body having the nanostructure embedded therein; and exposing a surface of the light-scattering body by removing a part or all of the base material and the layer including the nanostructure.

A reading circuit for an infrared detector, includes: pixel driving circuits arranged in a matrix; vertical selection lines provided for respective rows of the pixel driving circuits; horizontal selection lines provided for respective columns of the pixel driving circuits; a vertical selection circuit configured to output a row selection signal to the vertical selection lines; and a horizontal selection circuit configured to output a column selection signal to the horizontal selection lines to read, to a reading line, a signal from pixel driving circuits for one row selected by the row selection signal, wherein each pixel driving circuit includes a driving circuit of the infrared detector, and a switching circuit configured to switch whether or not to input a test signal to the driving circuit, based on the row selection signal output to a corresponding vertical selection line and the column selection signal output to a corresponding horizontal selection line.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.