The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E.sub.1) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E.sub.2) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect vias.

A control circuit for infrared detectors, includes: a driving circuit configured to drive a plurality of infrared detectors and generates, for each frame, a signal according to infrared rays incident on the plurality of infrared detectors; a holding circuit configured to hold a first signal generated by the driving circuit in a first frame and a second signal generated by the driving circuit in a second frame before the first frame; a difference calculation circuit configured to calculate a difference between the first signal and the second signal; and an amplifier circuit configured to amplify and output the difference calculated by the difference calculation circuit.

A reading circuit for an infrared detector, includes: pixel driving circuits arranged in a matrix; vertical selection lines provided for respective rows of the pixel driving circuits; horizontal selection lines provided for respective columns of the pixel driving circuits; a vertical selection circuit configured to output a row selection signal to the vertical selection lines; and a horizontal selection circuit configured to output a column selection signal to the horizontal selection lines to read, to a reading line, a signal from pixel driving circuits for one row selected by the row selection signal, wherein each pixel driving circuit includes a driving circuit of the infrared detector, and a switching circuit configured to switch whether or not to input a test signal to the driving circuit, based on the row selection signal output to a corresponding vertical selection line and the column selection signal output to a corresponding horizontal selection line.

A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

The system-on-chip camera comprises a semiconductor body with an integrated circuit, a sensor substrate, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a lens or an array of lenses on a surface of incidence. Filter elements, which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

An optoelectronic device includes at least one pixel, each pixel comprising an optical resonator comprising a photodetecting structure confined between a reflective metal layer and a second reflective metal layer; and a readout integrated circuit arranged on a substrate and comprising at least one buried readout electrode dedicated to the pixel and at least one metal or dielectric outer layer. The assembly comprising at least the reflective metal layer and the outer layer of the readout integrated circuit is called a planar assembly structure. The first metal layer is connected to the readout electrode by way of a metal via passing through the optical resonator structure and the planar assembly structure. The metal via is electrically isolated from the photodetecting structure and from the planar assembly structure.

An imaging device includes a first substrate including a pixel array and a first multilayer wiring layer. The first multilayer wiring layer includes a first wiring that receives electrical signals based on electric charge generated by at least one photoelectric conversion unit, and a plurality of second wirings. The imaging device includes a second substrate including a second multilayer wiring layer and a logic circuit that processes the electrical signals. The second multilayer wiring layer includes a third wiring bonded to the first wiring, and a plurality of fourth wirings. At least one of the plurality of fourth wirings being bonded to at least one of the plurality of second wirings. The second multilayer wiring layer includes at least one fifth wiring that is connected to the plurality of fourth wirings and that receives a power supply signal.

A method for manufacturing a device (1) for detecting electromagnetic radiation. The method comprises the steps of: supplying a first substrate (400) comprising a reading circuit (340), at least two first contact plugs (343, 344) and at least one first annular bonding element (345) surrounding the first contact plugs (343, 344); supplying a second substrate comprising a cap (210), an annular side wall forming with the cap (210) a cavity filled with a sacrificial material and a detection structure (100) housed in the cavity. The method further comprising the steps of bonding the second substrate (200) on the first substrate (400); arranging at least one opening (212) in the second substrate (200); selective elimination of the sacrificial material; and closing the opening (212) under at least a primary vacuum.

The system-on-chip camera comprises a semiconductor body (1) with an integrated circuit (40), a sensor substrate (2), sensor elements (3) arranged in the sensor substrate according to an array of pixels, a light sensor (4) in the sensor substrate apart from the sensor elements, and a lens or an array of lenses (15) on a surface of incidence (30). Filter elements (11, 12, 13), which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.