A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.

An image sensor pixel having a hybrid transfer storage gate-storage diode storage node is disclosed herein. An example image sensor includes a photodiode, a storage diode, a transfer gate, and a buried storage well. The photodiode, storage diode, and buried storage well are all disposed in a semiconductor material. The transfer storage gate may be disposed on a surface of the semiconductor material between the photodiode and the storage diode. Further, the buried storage well may be disposed under the storage diode and partially under the transfer storage gate. Additionally, a length of the transfer storage gate and a length of the storage diode may be equal, and the storage diode may passivate a surface of the semiconductor material between the transfer storage gate and an output gate.

A radiographic image capturing device includes: plural radiation dose detection pixels that respectively output signal values according to a dose of irradiated radiation; a determination unit that determines a presence or absence of defects, block-by-block, based on signal values of radiation dose detection pixels included in each of plural blocks, which are arranged such that the respective blocks include at least a portion of the plural radiation dose detection pixels; a block rearrangement unit that performs block rearrangement to change the arrangement of the plural blocks according to a determination result of the determination unit; and a detection unit that detects a dose of irradiated radiation based on signal values of each arranged block or of each rearranged block.

Provided is an image sensor having a pixel region including a plurality of pixel blocks disposed in a matrix form, outer address markers around the pixel region, interspaces between the plurality of pixel blocks, and inner address markers disposed in the interspaces.

In capturing an image of a grid by an image detector, a measurement pixel that is not in the position of a specific point having a maximum or minimum value of an output signal is referred to as a first measurement pixel, and a measurement pixel that is in the position of the specific point is referred to as a second measurement pixel. The disposition of the first and second measurement pixels are determined so as to satisfy the following condition: fG/fN≠odd number, wherein fG is a grid frequency and fN is a Nyquist frequency of pixels; and in shifting the grid C times by one pixel, the number of the first measurement pixels is larger than that of the second measurement pixels at any time in the range of a cycle C of a repetition pattern appearing in the image.

A switch circuit for use in a single-ended switched-capacitor circuit for front-end circuitry of a sensor device is disclosed. The switch circuit comprises a first transistor and a second transistor having a same channel-type as the first transistor. A first node is connected to a source of the first transistor and a drain of the second transistor and a second node is connected to a drain of the first transistor and a source of the second transistor. Also disclosed is a sampling circuit comprising the switch circuit and a sampling capacitor, wherein the switch circuit is configurable to electrically couple the sampling capacitor to an integrator circuit or to a voltage reference. An integrated circuit device and a light to frequency converter or light sensor comprising the switch circuit is also disclosed.

A photosensor having a plurality of light sensitive pixels each of which comprises a light sensitive region and a plurality of storage regions for accumulating photocharge generated in the light sensitive region, a transfer gate for each storage region that is selectively electrifiable to transfer photocharge from the light sensitive region to the storage region, and an array of microlenses that for each storage region directs a different portion of light incident on the pixel to a region of the light sensitive region closer to the storage region than to other storage regions.

A pixel array included in an auto-focus image sensor includes a substrate, a plurality of pixels, a deep device isolation region and a plurality of first ground regions. The substrate includes a first surface on which a gate electrode is disposed and a second surface opposite to the first surface. The plurality of pixels are disposed in the substrate, and include a plurality of first pixels configured to detect a phase difference and a plurality of second pixels configured to detect an image. The deep device isolation region is disposed in the substrate, extends substantially vertically from the second surface of the substrate to isolate the plurality of pixels from each other. The plurality of first ground regions are disposed adjacent to the first surface in the substrate and adjacent to only at least some of the plurality of first pixels.

A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

An image detector is disposed behind a grid. The image detector has normal pixels and measurement pixels. Out of a group of measurement pixels based on which an average value of dose measurement signals is calculated, a [C/D] number of measurement pixels are disposed or chosen in a cycle Z=(R×C)±D. Wherein, C represents a cycle of a repetition pattern appearing in an arrangement direction of X-ray transparent layers and X-ray absorbing layers in an X-ray image of the grid, and is represented in units of the number of pixels. R represents a natural number of 0 or more. D represents an integer less than the cycle C. [C/D] represents a maximum integer equal to or less than C/D. Provided that at least the [C/D] number of measurement pixels are shifted C occasions by one pixel, if D=1, the average value of the dose measurement signals is invariable without any variations.