A distance-measuring imaging device includes: a drive control unit; a light source unit; an image processing unit including light receiving units and charge reading units arranged one-to-one; and an image processing unit. The charge reading units are arranged partly at the left side of corresponding ones of the light receiving units and partly at the right side of corresponding ones of the same. In each of a period in which the exposure is performed when the exposure control signal is received after a first delay time since when the light emission control signal is received and a period in which the exposure is performed when the exposure control signal is received after a second delay time longer than the first delay time, since when the light emission control signal is received, the left-side charge reading units read charge leftward, and the right-side charge reading units read charge rightward.

A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.