A solid state imaging device has: a photosensitive part containing a plurality of charge transfer parts that transfer, in column units, the signal charges of a plurality of photoelectric conversion elements disposed in a matrix; a conversion/output unit that converts, to an electrical signal, the signal charges forwarded by the charge transfer parts; a peripheral circuit part that performs a predetermined process with respect to the electrical signals from the conversion/output part; a relay part that relays the forwarding to the peripheral circuit part of the electrical signal from the conversion/output part; a first substrate where a photosensitive part and the conversion/output part are formed; and a second substrate where the peripheral circuit part is formed. The first and second substrates are stacked together, and the relay part electrically connects the conversion/output part formed at the first substrate to the peripheral circuit part formed at the second substrate.

An imaging system including a sensor wafer and a logic wafer. The sensor wafer includes a plurality of pixels arranged in rows and columns, the plurality of pixels arranged in rows and columns and including at least a first pixel and a second pixel positioned in a first row included in the rows. The sensor wafer includes a first transfer control line associated with the first row, the first transfer control line coupled to both a first transfer gate of the first pixel and a second transfer gate of the second pixel. The logic wafer includes a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel, a first storage control line coupled to a first storage gate associated with the first pixel and a second storage control line coupled to a second storage gate associated with the second pixel.