A solid-state imaging device includes a light receiving section formed by such exposure as to stitch a plurality of patterns in a first direction on a semiconductor substrate. The light receiving section includes a plurality of pixels disposed in a two-dimensional array in the first direction and a second direction perpendicular to the first direction. Electric charges are transferred in the second direction in each of pixel columns consisting of a plurality of pixels disposed in the second direction, among the plurality of pixels.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×10.sup.15 cm.sup.−3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Disclosed is a time delayed integration (TDI) image sensor capable of exposure control, including a pixel area including a plurality of line sensors, a light mask configured to block the incidence of light on part of the line sensors, and a scan controller configured to generate a line control signal and an exposure control signal based on the line trigger signal and to control movement of charges in the plurality of line sensors based on the generated line control signal and exposure control signal.

Optical sensing apparatus includes at least one semiconductor substrate and a first array of single-photon detectors, which are disposed on the at least one semiconductor substrate, and second array of counters, which are disposed on the at least one semiconductor substrate and are configured to count electrical pulses output by the single-photon detectors. Routing and aggregation logic is configured, in response to a control signal, to connect the single-photon detectors to the counters in a first mode in which each of at least some of the counters aggregates and counts the electrical pulses output by a respective first group of one or more of the single-photon detectors, and in a second mode in which each of the at least some of the counters aggregates and counts the electrical pulses output by a respective second group of two or more of the single-photon detectors.

A time-of-flight image sensor is disclosed. The time-of-flight image sensor includes an array of pixels. Each pixel of the array of pixels includes a first photogate, a second photogate adjacent the first photogate, an isolation barrier intermediate the first photogate and the second photogate, and an in-pixel ground node intermediate the first photogate and the second photogate.

An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.

A method for optical sensing includes directing a series of optical pulses toward a target scene and imaging optical radiation that is reflected from the target scene onto an array of single-photon detectors, which output electrical pulses in response to photons that are incident thereon. The electrical pulses output by the single photon detectors are counted in multiple different gating intervals that are synchronized with each of the optical pulses, including at least first and second gating intervals at different, respective delays relative to the optical pulses, while the delays are swept over a sequence of different delay times during the series of the optical pulses. A time of flight of the optical pulses is computed by comparing respective first and second counts of the electrical pulses that were accumulated in the first and second gating intervals over the series of the optical pulses.

Systems and methods in accordance with embodiments of the invention implement TDI imaging techniques in conjunction with monolithic CCD image sensors having multiple distinct imaging regions, where TDI imaging techniques can be separately implemented with respect to each distinct imaging region. In many embodiments, the distinct imaging regions are defined by color filters or color filter patterns (e.g. a Bayer filter pattern); and data from the distinct imaging regions can be read out concurrently (or else sequentially and/or nearly concurrently). A camera system can include: a CCD image sensor including a plurality of pixels that define at least two distinct imaging regions, where pixels within each imaging region operate in unison to image a scene differently than at least one other distinct imaging region. In addition, the camera system is operable in a time-delay integration mode whereby time delay-integration imaging techniques are imposed with respect to each distinct imaging region.

A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.

An image sensor may include a pixel array, row control circuitry, and column readout circuitry. The row control circuitry may operate the pixel array in a global shutter mode of operation. In particular, timing control circuitry may provide global timing clock signals associated with a global photodiode reset event and a global photodiode charge transfer event to row driver circuitry providing control signals to each row in the array. Each driver circuitry may include a time delay circuit that delays the global timing clock signal by different amounts across the rows. Therefore, these global events may be offset on a per-row or per-row group basis, thereby mitigating power surges associated with global events. Further, by offsetting the global photodiode reset and charge transfer events using the same delay for a given row, the same global integration time may be preserved across different rows.