The invention relates to a TDI line detector (1), comprising n TDI lines (Z1-Zn), wherein each TDI line (Z) has m pixels (P), and at least one read-out electronics (11-14), wherein the TDI line detector (1) is subdivided into x submodules (S1-S4), wherein the number of lines (Z) of a submodule (S1-S4) is n/x, wherein a discrete read-out electronics (11-14) is associated with the last line of each submodule (S1-S4), wherein the length (L1) of the read-out electronics (11-14) corresponds to an integer multiple of the length (L2) of a pixel (P), wherein x2 is, wherein the associated pixels (P) of different submodules (S1-S4) are arranged pixel to pixel relative to one another or the submodules (S1-S4) or groups of submodules (S1-S4) are laterally interlinked alternately by half a pixel (P).

The disclosure relates to a demodulator including a pinned photodiode, at least one storage node, at least one transfer gate connected between the storage node and the pinned photodiode. The pinned photodiode includes a p-doped epitaxial semiconductor layer, a n-doped semiconductor region formed within the epitaxial semiconductor layer and creating therewith a lower junction and at least one lateral junction substantially perpendicular to the lower junction, a p+ pinning layer formed on top of said semiconductor region. The demodulator further includes a generating unit configured to generate minority and majority carriers at said lateral junction and to form a lateral photodiode.

A solid-state imaging device includes an imaging element array that includes M imaging elements arranged in a first direction and N imaging elements arranged in a second direction, that is, M?N imaging elements in total, each of the imaging elements including a photoelectric conversion unit that includes a photoelectric conversion layer 21, an insulation layer 32, a charge discharge electrode 22, an upper electrode 23, and a charge accumulation electrode 24. The photoelectric conversion layer is provided as a common layer at least for the N imaging elements. The photoelectric conversion unit of each of the imaging elements further includes a first charge transfer control electrode 25, a second charge transfer control electrode 26, and a light shielding layer 12. The photoelectric conversion layer 21 includes a photoelectric conversion layer-first region 21A, a photoelectric conversion layer-second region 21B, and a photoelectric conversion layer-third region 21C. The light shielding layer 12 covers at least the photoelectric conversion layer-second region 21B and the photoelectric conversion layer-third region 21C.

A time delay and integration charge coupled device includes an array of pixels and a clock generator. The array of pixels is distributed in a scan direction and a line direction perpendicular to the scan direction in which at least some of the pixels of the array include three or more gates aligned in the scan direction. The clock generator provides clocking signals to transfer charge along the scan direction between two or more pixel groups including two or more pixels adjacent in the scan direction. The clocking signals include phase signals to transfer the charge to an adjacent pixel group along the scan direction at a rate corresponding to the velocity of the target by driving the gates of the two or more pixel groups and generating a common potential well per pixel group for containing charge generated in response to incident illumination.

Embodiments disclosed herein relate to a ROIC with a plurality of unit cells coupled to a detector array having a plurality of detectors for collecting photoelectrons over a plurality of temporal instances. An individual unit cell is electrically coupled to an individual detector to have one-to-one correspondence and includes one or more storage elements coupled to one or more programmable logic control switches. The storage element(s) store signal charges representing the photoelectrons while the programmable logic control switch(es) direct the signal charges from the storage element(s) at an individual temporal instance. A configuration of signal charges in the plurality of unit cells is mathematically operated as a three-dimensional matrix having a plurality of elements, where the three dimensions correspond to the two spatial dimensions of an individual unit cell and the individual temporal instance, and an individual element has a value corresponding to the number of signal charges stored therein.

An image sensor is provided that includes a pixel array divided into a plurality of pixel groups. Each pixel group is clocked by a respective plurality of horizontal-register clocks. Clock signals for the image sensor are adjusted. Adjusting the clock signals includes phase-shifting each plurality of horizontal-register clocks by a respective phase delay of a plurality of phase delays. The phase delays are evenly spaced and are spaced symmetrically about zero. With the clock signals adjusted, a target is imaged using the image sensor.

First and second images of a semiconductor die or portion thereof are generated. Generating each image includes performing a respective instance of time-domain integration (TDI) along a plurality of pixel columns in an imaging sensor, while illuminating the imaging sensor with light scattered from the semiconductor die or portion thereof. The plurality of pixel columns comprises pairs of pixel columns in which the pixel columns are separated by respective channel stops. While performing a first instance of TDI to generate the first image, a first bias is applied to electrically conductive contacts of the channel stops. While performing a second instance of TDI to generate the second image, a second bias is applied to the electrically conductive contacts of the channel stops. Defects in the semiconductor die or portion thereof are identified using the first and second images.

A radiography apparatus includes: a first radiation detector that includes plural pixels accumulating charge corresponding to emitted radiation; a second radiation detector that is stacked on a side of the first radiation detector opposite to a side on which the radiation is incident and includes plural pixels accumulating charge corresponding to the emitted radiation; a first control unit that performs control for reading the charge accumulated in the pixels of the first radiation detector while the charge is accumulated in the pixels of the first radiation detector and the second radiation detector; and a second control unit that starts control for reading the charge accumulated in the pixels of the second radiation detector while the charge is accumulated in the pixels of the first radiation detector and the second radiation detector at a time different from a time when the first control unit starts the control.

Apparatuses for optical and image sensing are disclosed herein. The optical sensing apparatus can include a first and a second signal wire. The optical sensing apparatus can include N photodetectors arranged in an array, connected to the first signal wire and a second input terminal connected to the second signal wire. The optical sensing apparatus can include a modulation circuit configured to generate a modulated signal including a source transistor pair, a sink transistor pair, and a second sink transistor wherein a first photodetector of the N photodetectors is arranged between the source transistor pair and an Nth photodetector of the N photodetectors, and the Nth photodetector of the N photodetectors is arranged between the sink transistor pair and the first photodetector of the N photodetectors.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1?10.sup.15 cm.sup.?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.