Embodiments provide a semiconductor structure and a method for fabricating a semiconductor structure. The semiconductor structure includes: a source region and a drain region arranged at intervals on a substrate; a gate oxide layer arranged between the source region and the drain region; a gate structure arranged on the gate oxide layer; and a conductive plug arranged at a corresponding position of the source region and a corresponding position of the drain region. The gate structure includes a conductive layer having an inclined side surface facing toward the conductive plug. Compared with a traditional gate structure, in the solutions of the present disclosure, a distance between the conductive layer having the inclined side surface and the conductive plug is increased, thereby reducing a parasitic capacitance between the gate structure and the conductive plug, such that capacitance between a gate and the source/drain region is reduced, and device characteristics are improved.

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Al.sub.x1Ga.sub.1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Al.sub.x2Ga.sub.1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A third III-V compound layer is disposed on the second III-V compound layer. The first III-V compound layer and the third III-V compound layer are composed of the same group III-V elements. The third III-V compound layer includes a body and numerous finger parts. Each of the finger parts is connected to the body. All finger parts are parallel to each other and do not contact each other. A source electrode, a drain electrode and a gate electrode are disposed on the first III-V compound layer.

Processor elements are described herein. A processor element comprises a silicon layer. The processor element further comprises one or more conductive electrodes. The processor element further comprises dielectric material having a non-uniform thickness, the dielectric material disposed at least between the silicon layer and the one or more conductive electrodes. In use, when a bias potential is applied to one or more of the conductive electrodes, the positioning of the one or more conductive electrodes and the non-uniform thickness of the dielectric material together define an electric field profile to induce a quantum dot at an interface between the silicon layer and the dielectric layer. Methods are also described herein.

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a logic cell on a substrate, and a first metal layer on the logic cell. The first metal layer includes first and second power lines and first to third lower lines on first to third wiring tracks therebetween. The first to third wiring tracks extend in parallel in the first direction. The first lower line includes first and second lines spaced apart in the first direction from each other at a first distance. The third lower line includes third and fourth lines spaced apart in the first direction at a second distance. The first line has a first end facing the second line. The third line has a second end facing the fourth line. A curvature at the first end is substantially the same as that at the second end.

In some embodiments, the present disclosure relates to a method for manufacturing an integrated chip. The method includes forming a transistor structure over a substrate. The transistor structure comprises a pair of source/drain regions and a gate electrode between the source/drain regions. A lower inter-level dielectric (ILD) layer is formed over the pair of source/drain regions and around the gate electrode. A gate capping layer is formed over the gate electrode. A selective etch and deposition process is performed to form a dielectric protection layer on the gate capping layer while forming a contact opening within the lower ILD layer. A lower source/drain contact is formed within the contact opening.

The present disclosure relates to a graphene spin transistor for all-electrical operation at room temperature and a logic gate using the graphene Rashba spin transistor. A graphene spin transistor of the present disclosure provides a graphene spin FET (Field Effect Transistor) for all-electrical operation at room temperature without a magnetic field or a ferromagnetic electrode by utilizing the Rashba-Edelstein effect in the graphene or the spin Hall effect of a TMDC (Transition Metal Dichalcogenide) material in order to replace CMOS transistors and extend Moore's Law, and further provides a logic gate using the graphene Rashba spin transistor.

A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.

The semiconductor device includes a first source/drain layer, a dielectric layer, a channel, a gate electrode, a first gate dielectric layer, a seed layer, a conductive layer, and a second source/drain layer. The dielectric layer is disposed on the first source/drain layer, in which the dielectric layer has a hole penetrating the dielectric layer. The channel is disposed in the hole and extends substantially perpendicular to an upper surface of the first source/drain layer. The gate electrode surrounds the channel. The first gate dielectric layer is disposed between the gate electrode and the channel. The seed layer is disposed between the gate electrode and the dielectric layer and on an upper surface of the dielectric layer, in which the seed layer covers a portion of a sidewall of the hole.

Embodiments include a transistor and methods of forming a transistor. In an embodiment, the transistor comprises a semiconductor channel, a source electrode on a first side of the semiconductor channel, a drain electrode on a second side of the semiconductor channel, a polarization layer over the semiconductor channel, an insulator stack over the polarization layer, and a gate electrode over the semiconductor channel. In an embodiment, the gate electrode comprises a main body that passes through the insulator stack and the polarization layer, and a first field plate extending out laterally from the main body.