In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.

A transient voltage suppressing (TVS) protection device includes a first high-side steering diode having an anode terminal coupled to a first protected node and a cathode terminal coupled to a second node; and a first low-side steering diode having a cathode terminal coupled to the first protected node and an anode terminal coupled to a third node, wherein the first low-side steering diode comprises a silicon controlled rectifier including alternating p-type and n-type regions, the outermost p-type region forming the anode terminal and the outermost n-type region forming the cathode terminal, the n-type region between a pair of p-type regions being substantially depleted at a bias voltage of zero volt.