A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second element on a first surface of a semiconductor substrate. The semiconductor substrate is a first element-based semiconductor substrate, and the first element and the second element are Group IV elements. A first thermal anneal of the alloy layer and the first element-based substrate is performed. The first thermal anneal causes the second element in the alloy layer to migrate towards a surface of the alloy layer. A Schottky contact layer is formed on the alloy layer after the first thermal anneal.

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs formed in an epitaxial layer. Each MOSFET includes source and body regions and a contact trench formed between first and second gate trenches. A region of the epitaxial layer between the gate trenches extends to the top surface of the epitaxial layer. An insulated gate electrode is formed in each gate trench. At least a portion of the contact trench extends from a top surface of the epitaxial layer to a depth that is shallower than the bottom of the body region.

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.

A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

A semiconductor device includes: a semiconductor layer including a trench; an insulating film covering an inner surface of the trench; a conductor embedded in the trench covered with the insulating film; and a Schottky junction layer. A Schottky junction is formed by the Schottky junction layer and a region being part of a semiconductor layer surface and being adjacent to the trench. A surface of the conductor is located at an elevation lower than the surface of the semiconductor layer. The semiconductor layer surface includes a sloping portion adjacent to an inner wall surface of the trench. The sloping portion has a downward gradient that is steeper in a region closer to the inner wall surface.

A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

An ion implanted region is formed by implanting Mg ions into a predetermined region of the surface of the first p-type layer. Subsequently, a second n-type layer is formed on the first p-type layer and the ion implanted region. A trench is formed by dry etching a predetermined region of the surface of the second n-type layer until reaching the first n-type layer. Next, heat treatment is performed to diffuse Mg. Thus, a p-type impurity region is formed in a region with a predetermined depth from the surface of the first n-type layer below the ion implanted region. Since the trench is formed before the heat treatment, Mg is not diffused laterally beyond the trench. Therefore, the width of the p-type impurity region is almost the same as the width of the first p-type layer divided by the trench.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.