A method is disclosed for fabricating a semiconductor circuit. A semiconductor substrate is provided. A first semiconductor device is fabricated including a first semiconductor material on the substrate and forming an insulating layer including a cavity structure on the first semiconductor device. The cavity structure includes at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure including a second semiconductor material different from the first semiconductor material in the growth channel, forming a semiconductor starting structure for a second semiconductor device from the filling structure, and fabricating a second semiconductor device including the starting structure. Corresponding semiconductor circuits are also disclosed.

An image sensor employing deep trench spacing isolation is provided. A plurality of pixel sensors is arranged over or within a semiconductor substrate. A trench is arranged in the semiconductor substrate around and between adjacent ones of the plurality of pixel sensors, and the trench has a gap located between sidewalls of the trench. A cap is arranged over or within the trench at a position overlying the gap. The cap seals the gap within the trench. A method of manufacturing the image sensor is also provided.