A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation E.sub.LUMO>E.sub.C or equation E.sub.HOMO<E.sub.V.

Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

An electronic device provided with a bacteria detection element and a bacteria detection sensor, and a method of detecting bacteria by using the same are proposed. The electronic device provided with the bacteria detection element and the bacteria detection sensor are disclosed such that a first semiconductor layer, a light absorption layer, and a second semiconductor layer are provided to have respective inclined surfaces in a mesa structure, the respective inclined surfaces are passivated by an oxide, and the light absorption layer is formed as a multi-layer. The electronic device having the bacteria detection sensor provides a function capable of detecting the bacteria and even sterilizing the detected bacteria. In particular, a UVC light source and a UVA light source are mounted on a single printed circuit board, whereby the electronic device may be produced in a small size and may reduce production costs.

A transceiver assembly for a wireless power transfer system includes a transceiver system comprising a photodiode assembly, a voltage converter and a light emitting diode and a photodiode. The photodiode assembly may be configured to receive a high-power laser beam from a transmitter and to convert the high-power laser beam to electrical energy. The voltage converter may be configured to adjust an input impedance based on a voltage measure of the photodiode assembly so as to maximize power transfer from the photodiode assembly to an energy storage device electrically coupled to the voltage converter. The light emitting diode and the photodiode may be configured to enable free space optical communication with the transmitter. The light emitting diode may emit signals indicating a presence and a location of the transceiver to the transmitter at least when the energy storage device requires a charge.

A metamorphic multijunction solar cell having a growth semiconductor substrate with a top surface having a doping in the range of 1x10.sup.18 to 1x10.sup.20 charge carriers/cm.sup.3; a window layer for a top (light facing) subcell formed directly on the top surface of the growth substrate; a sequence of layers of semiconductor material forming a solar cell directly on the window layer; a surrogate substrate on the top surface of the sequence of layers of semiconductor material, wherein a portion of the semiconductor substrate is removed so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 μm to 10 μm, remains.

A method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.