High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga.sub.2O.sub.3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

A method of coordinating wireless power transfer and data communication between a transmitter and a receiver comprising recognizing at the receiver that an energy store electrically coupled to the receiver requires an electrical charge, emitting from the receiver a beacon signal to the transmitter, the beacon signal including information about the receiver and a state of charge of the energy store, recognizing at the receiver first and second localization signals from the transmitter, establishing low-power and high-power laser beam connections between the receiver and the transmitter in response to the localization signals, and communicating further information via the low-power beam on a periodic basis while optical power is being transferred via the high-power beam. The low-power beam connection includes further information about the receiver and the state of charge of the energy store. Optical power is transferred from the transmitter to the receiver via the high-power beam.

A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

An assembly for optical to electrical power conversion including a photodiode assembly having a substrate layer and an internal side, an antireflective layer, a heterojunction buffer layer adjacent the internal side; an active area positioned adjacent the heterojunction buffer layer, a plurality of n+ electrode regions and p+ electrode regions positioned adjacent the active area, and back-contacts configured to align with the n+ and p+ electrode regions. The active area converts photons from incoming light into liberated electron hole pairs. The heterojunction buffer layer prevents electrons and holes of the liberated electron hole pairs from moving toward the substrate layer. The plurality of electrode regions are configured in an alternating pattern with gaps between each n+ and p+ electrode region. The electrode regions receive and generate electrical current from migration of the electrons and the holes, provide electrical pathways for the electrical current, and provide thermal pathways to dissipate heat.

A method of coordinating wireless power transfer and data communication between a transmitter and a receiver comprising recognizing at the receiver that an energy store electrically coupled to the receiver requires an electrical charge, emitting from the receiver a beacon signal to the transmitter, the beacon signal including information about the receiver and a state of charge of the energy store, recognizing at the receiver first and second localization signals from the transmitter, establishing low-power and high-power laser beam connections between the receiver and the transmitter in response to the localization signals, and communicating further information via the low-power beam on a periodic basis while optical power is being transferred via the high-power beam. The low-power beam connection includes further information about the receiver and the state of charge of the energy store. Optical power is transferred from the transmitter to the receiver via the high-power beam.

Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.