A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

Photo-detection device (100) including a semiconductor substrate (110) made of Cd.sub.xHg.sub.1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region.

According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170).

A significant reduction in the dark current and an optimal charge carrier collection are thus combined.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Arsenide (InAr)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

The present disclosure provides an optoelectronic sensor and a manufacturing method thereof, and an optoelectronic device and a manufacturing method thereof. The optoelectronic sensor includes a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode arranged in a stack, wherein each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, the first electrode is a transparent electrode and has a work function greater than that of the first semiconductor layer; and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer.

An electronic device includes a semiconductor nanoparticle, and a method of manufacturing the semiconductor nanoparticle is additionally provided. The semiconductor nanoparticle includes: a core including a first element; and a shell covering at least a portion of a surface of the core and including a second element and a third element, wherein the first element, the second element, and the third element are different from each other, and the first element and the second element are chemically bonded to each other on the at least a portion of the surface of the core.

According to the embodiments provided herein, a photovoltaic device can have an energy side configured to be exposed to a light source. The photovoltaic device can include an absorber layer. The absorber layer can include a first surface facing the energy side and a thickness defined between the first surface and a second surface. The absorber layer can include mercury having a mole fraction y, cadmium having a mole fraction (1y), and tellurium. The mole fraction y of the mercury can vary through the thickness of the absorber layer with distance from the first surface of the absorber layer.

Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

A method and apparatus for calculating and accounting for non-uniformity of pixels within an infrared (IR) focal plane sensor utilizing an infrared light emitting diode (IR LED) to wash out environmental infrared light is provided. The IR LED may back propagate through an optical path of an IR sensor to illuminate pixels on a focal plane array, thereby providing data by which the non-uniformity offsets may be calculated and removed for normal operation of the IR sensor.

A photo detector comprises a first photo diode configured to capture visible light, a second photo diode configured to capture one of infrared light or ultraviolet light, and an isolation region between the first photo diode and the second photo diode. The photo detector is capable of capturing infrared light and ultraviolet light in addition to visible light.