A photo detector comprises a first photo diode configured to capture visible light, a second photo diode configured to capture one of infrared light or ultraviolet light, and an isolation region between the first photo diode and the second photo diode. The photo detector is capable of capturing infrared light and ultraviolet light in addition to visible light.

A method and apparatus for calculating and accounting for non-uniformity of pixels within an infrared (IR) focal plane sensor utilizing an infrared light emitting diode (IR LED) to wash out environmental infrared light is provided. The IR LED may back propagate through an optical path of an IR sensor to illuminate pixels on a focal plane array, thereby providing data by which the non-uniformity offsets may be calculated and removed for normal operation of the IR sensor.

A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.

A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.

A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Arsenide (InAs)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).