The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. The light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer which is disposed between the on-chip lens and the wiring layer and includes a photodiode. The wiring layer includes a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view, and a transfer transistor which reads charge generated by the photodiode, and the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the transfer transistor. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

A light reception element includes a semiconductor portion having a first surface including a light receiving portion and a light shielding portion, and a light shielding metal film provided on the light shielding portion. The metal film has a second surface facing a side opposite to the first surface and receiving incident light. A plurality of recess portions are formed on the second surface. An inner surface of the recess portion includes a curved portion curved such that the recess portion reduces in size in a direction along the second surface from the second surface toward a bottom part of the recess portion.

The disclosure provides a silicon carbide detector and a preparation method therefor. The silicon carbide detector comprises: a wafer, the wafer sequentially comprises, from bottom to top, a substrate, a silicon carbide P+ layer, an N-type silicon carbide insertion layer, an N+ type silicon carbide multiplication layer, an N-type silicon carbide absorption layer and a silicon carbide N+ layer; the doping concentration of the N-type silicon carbide insertion layer gradually increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer gradually decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to an upper surface of the silicon carbide P+ layer; an N-type electrode is arranged on an upper surface of the mesa, and a P-type electrode is arranged on an upper surface of a non-mesa region.

In an edge incident type semiconductor light receiving device that reflects light incident parallel to the main surface of the semiconductor substrate opaque to the incident light to the light receiving section on the main surface side, a light guide section is formed to expose the light receiving section along the light incident direction from the light incident side end of the semiconductor substrate, and in order to guide the light incident on the light guide section to the light receiving section, a light reflection section having a given crossing angle with the main surface is provided at the end of the light guide section in the light incident direction.

An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

Provided is an imaging device including: a pixel region including a first photoelectric converter; an outside-pixel region including a second photoelectric converter coupled to a predetermined electric potential; and a circuit substrate having one surface on which the first photoelectric converter and the second photoelectric converter are provided, and including a peripheral circuit electrically coupled to the first photoelectric converter.

An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.