Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

The present disclosure provides a ray detection substrate, a manufacturing method thereof and a ray detection device, in the field of display technology. The ray detection substrate comprises: a basal substrate, wherein the basal substrate is provided with a photodiode, the photodiode includes two doped layers and an intrinsic layer located between the two doped layers, and an arrangement direction of the two doped layers is parallel with the basal substrate. The present disclosure solves the problems that the X-ray detection device is poor in performance and improves the performance of the X-ray detection device. The present disclosure is applied to a ray detection device.

An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

A fingerprint identification device and a manufacturing method thereof, an array substrate and a display apparatus are provided. The fingerprint identification device comprises first gate lines and read signal lines. The first gate lines and the read signal lines intersect with each other to define a plurality of fingerprint identification units, and each fingerprint identification unit is provided with a photosensitive element and a first transistor. The photosensitive element includes a first electrode layer, and a first doped semiconductor layer, a second doped semiconductor layer and a second electrode layer which are sequentially positioned on a surface of the first electrode layer.

A photoelectric conversion device includes: a first electrode; a second electrode; a photoelectric conversion layer arranged between the first electrode and the second electrode; a floating gate electrode connected to the second electrode and adapted to accumulate signal charges generated in the photoelectric conversion layer; an amplification transistor adapted to output a signal corresponding to a potential of the floating gate electrode; and a charge injection portion arranged between the first electrode and the photoelectric conversion layer and adapted to inject opposite polarity charges of signal charges from the first electrode to the photoelectric conversion layer to reset signal charges accumulated in the floating gate electrode.

A photoelectric conversion apparatus includes a plurality of pixels including a pixel electrode having a first electrode and a second electrode, an upper electrode, a photoelectric conversion layer, a first signal output circuit, and a second signal output circuit, and a control unit. During a first period in which the first signal output circuit outputs a signal, the second electrode collects signal charges.

An optical component serves as a nonlinear photodetector for generating a nonlinear electrical signal. The component comprises a first electrically conductive layer, a second electrically conductive layer and an absorption layer. The absorption layer is arranged between the first and the second electrically conductive layer and has a layer thickness of at least 500 nm. The electrical signal is generated by the component by applying a voltage at the component and irradiating the component with electromagnetic radiation in a first wavelength range (1) with a radiation intensity of less than 10 nW/mm2 and also irradiating the optical component with electromagnetic radiation in a second wavelength range (2) that is different from the first wavelength range (1) and a radiation intensity of less than 100 nW/mm2.

A shift of a threshold voltage of a thin film transistor upon X-ray irradiation is suppressed. An imaging panel having a plurality of pixels, for picking up scintillation light obtained by converting X-ray projected from an X-ray source, with use of a scintillator, includes photodiodes 15, TFTs 14, and an organic film 43. The photodiodes 15 are provided at the pixels, respectively, for receiving the scintillation light and converting the same into charges. The TFTs 14 are provided at the pixels, respectively, for reading the charges obtained through the conversion by the photodiodes 15. Each TFT 14 includes an oxide semiconductor layer 142, a gate electrode 141, as well as a source electrode 143S and a drain electrode 143D formed on a part of the oxide semiconductor layer 142. In one pixel area of the pixels, an area where the organic film 43 does not exist exists in a layer at an upper position with respect to the TFTs 14, other than an area where a contact hole CH1 for connecting the photodiode 15 and the drain electrode 143D is provided.

A detection substrate and a manufacturing method thereof, and a detector are provided. The detection substrate comprises a base substrate, a thin film transistor, a PIN photodiode and a scintillation layer. The thin film transistor and the PIN photodiode are provided above a first face of the base substrate and the scintillation layer is provided above a second face of the base substrate. The visible light obtained after the X-ray passes through the scintillation layer is directly irradiated on the PIN photodiode after passing through the base substrate with relative high transmittance, thus preventing intensity of the light irradiated on the PIN photodiode from being weakened, and improving light utilization efficiency of the detection substrate.