The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

According to an aspect, a detection device includes: a substrate; a plurality of photodiodes arranged on a first principal surface of the substrate; a protective film that covers the photodiodes; a plurality of lenses provided for each of the photodiodes so as to face the photodiode with the protective film interposed between the lenses and the photodiodes; and a projection provided between the lenses. A top of the projection is located at a position higher than a top of each of the lenses when viewed from the first principal surface.

A display panel, a method of manufacturing a display panel, and a display device are provided. The display panel includes an array substrate and a color filter layer on the array substrate. The array substrate includes a display region and a non-display region. The display region includes a photo-sensor.

A detector for determining a position of at least one object, in particular for 3D-sensing concepts, is disclosed. The detector comprises a longitudinal optical sensor (110) for determining a longitudinal position of an object by a light beam traveling from the object to the detector and a transversal optical detector (112) which may be designed as an imaging device or a position sensitive detector. The longitudinal sensor (110) has at least two PN structures or PIN structures (138, 140). Each of the PN structures or PIN structures is located between two electrode layers (144), thereby forming photodiodes (146) having a longitudinal sensor region (148) each. Longitudinal sensor signals from the photodiodes (146) are, given the same total power of illumination, are dependent on a beam cross-section of the light beam in the longitudinal sensor regions (148). As an alternative, instead of the transversal optical detector (112) the photodiodes (146) of the longitudinal optical sensor (110) may be adapted to operate as one-dimensional position sensitive detectors each, for determining a transversal x-coordinate and a transversal y-coordinate, respectively.

The present disclosure provides an image sensor panel and a method for capturing graphical information using the image sensor panel. In one aspect, the image sensor panel includes a substrate and a sensor array on the substrate, the sensor array including a plurality of photosensitive pixels. The substrate includes a first region defined by the sensor array and a second region other than the first region. The second region is optically transparent and has an area greater than that of the first region.

A photodiode according to an embodiment includes: a semiconductor layer including a first area, a second area, and a third area; a first electrode electrically connected to the first area; and a second electrode electrically connected to the third area, wherein the first area includes a p-type semiconductor area, the third area includes an n-type semiconductor area, and the thickness of the semiconductor layer is 50 nanometers to 800 nanometers.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value x.sub.pi1 of proportion of tin less than x.sub.ps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x.sub.ps1, and vertical structures having an average value x.sub.ps2 of proportion of tin greater than x.sub.ps1, thus forming regions for emitting or for receiving infrared radiation.

This invention describes a Quantum NPS Photodetector (QNPSPD). A plurality of dispersed patterned Nanoporous Silicon island regions with sub 50 nm pore nc-pSi nanostructure are formed in a high resistivity Si substrate on the first side of a front illuminated QNPSPD device with each nc-pSi region surrounded along its perimeter by a contiguous interconnected p/n diode junction. The Quantum NPS Photodetector is characterized by enhanced responsivity in the spectral range of from about 0.2 um to about 1.1 um, low noise, and fast response time, and it can operate from 10 mV to about 180V. The QNPSPD photodetector can provide excellent imaging in the UV-VIS-NIR spectral range that is important for many applications including defense, homeland security, medical imaging, and night vision. The QNPSPD manufacturing method described is adaptable for low cost manufacturing and scalable to large size wafer diameters. Various embodiments of the Quantum NPS Photodetector and methods for its manufacturing are disclosed.