There is set forth herein a method for forming a suspension having nanoparticles. There is also set forth herein a method for making an interface including nanoparticles. A morphology of conductive nanoparticle interface is set forth herein.

The present disclosure relates to a metal-semiconductor-metal photodetector configured to detect incident light in a given range of wavelengths comprising: an absorbing semiconductor layer (325); a first semiconductor layer (321) made of a first semiconductor material and in electrical contact with said absorbing semiconductor layer; a first metal electrode (340) in electrical contact with the first semiconductor layer (321), configured to produce with the first semiconductor layer (321), an electron Schottky junction, wherein the first semiconductor layer is arranged between said first metal electrode and the absorbing semiconductor layer; a second semiconductor layer (322) made of a second semiconductor material different from the first semiconductor material, in electrical contact with said absorbing semiconductor layer; a second metal electrode (330) in electrical contact with the second semiconductor layer configured to produce with the second semiconductor layer, a hole Schottky junction, wherein the second semiconductor layer is arranged between said second metal electrode and the absorbing semiconductor layer.

Embodiments according to the present invention include an apparatus for absorbing electromagnetic radiation, including a semiconductor substrate with a main side and a trench structure introduced into the main side and including at least one trench in the semiconductor substrate, wherein each trench of the trench structure comprises a trench floor area, and wherein the semiconductor substrate is transparent for the electromagnetic radiation. The apparatus further includes a metal material arranged in the trench floor area, wherein, together with the semiconductor substrate, the metal material provides a Schottky junction configured for absorbing the electromagnetic radiation, and a filling structure, which fills the trench and forms a common surface with the main side. Moreover, the apparatus includes a reflector arranged at the common surface and configured to at least partially reflect the electromagnetic radiation received by the semiconductor substrate in the direction of the metal material.

An active optical adapter plate comprises a main body, the main body comprises at least a through hole and at least a photoelectric detection area, the through hole is disposed on an end face of the main body and configured to insert an optical fiber to provide an optical path for an emission light of a laser; the photoelectric detection area is disposed on the end face of the main body having the through hole, and comprises a photoelectric detector used for detecting a reflected light of the emission light of the laser and converting the detected reflected light into an electrical signal.

An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.

Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-crystalline germanium with increased radiation absorption in the near infrared region of the electromagnetic spectrum, including at wavelengths of 1550 nm and above.

This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device performance. Described are geometries based on rounded asymmetrical fingers and electrode bases of varying width. Simulations demonstrate benefits for reducing self-heating and thermal power loss, which reduces overall on-state resistance and increases reverse break down voltages.