Methods and materials for growing TMD materials on substrates and making semiconductor devices are described.

A detector for an optical detection of at least one object. The detector includes: at least one transversal optical sensor configured to determine a transversal position of a light beam traveling from the object to the detector, the transversal optical sensor including: at least one photovoltaic layer embedded between at least two conductive layers, the photovoltaic layer including a plurality of quantum dots, the at least one transversal sensor signal indicating a transversal position of the light beam in the photovoltaic layer; and at least one evaluation device configured to generate at least one item of information on a transversal position of the object by evaluating the at least one transversal sensor signal.

The present invention relates to plasmonic components, more particularly plasmonic waveguides, and to plasmonic photodetectors that can be used in the field of microoptics and nanooptics, more particularly in highly integrated optical communications systems in the infrared range (IR range) as well as in power engineering, e.g. photovoltaics in the visible range. The present invention also specifies a method for producing a plasmonic component, more particularly for photodetection on the basis of internal photoemission.

A scanning system includes a light source configured to emit light as a series of one or more light pulses, a scanner configured to direct the one or more light pulses towards a remote target, and a receiver configured to detect light scattered by the remote target. The receiver includes a light detector element disposed on an ASIC that includes multiple comparators disposed in parallel with one another, and corresponding time-to-digital converters (TDCs) coupled to the comparator. Each of the comparators processes a received electrical signal from the light detector element to produce a digital edge signal when the amplitude of the received electrical signal reaches a particular threshold. A corresponding TDC outputs a time delay value associated with a time at which the received electrical signal reaches the particular threshold.

The present invention provides a solar-blind detecting device with a wide-bandgap oxide, which comprises an oxide epitaxial sensing layer disposed on a substrate for improving the property as well as substantially increasing the photocurrent in the oxide epitaxial sensing layer under the stimulation of ultraviolet light. Particularly, the sensing performance for the deep ultraviolet region (200280 nanometers) is enhanced significantly.

An active optical adapter plate comprises a main body, the main body comprises at least a through hole and at least a photoelectric detection area, the through hole is disposed on an end face of the main body and configured to insert an optical fiber to provide an optical path for an emission light of a laser; the photoelectric detection area is disposed on the end face of the main body having the through hole, and comprises a photoelectric detector used for detecting a reflected light of the emission light of the laser and converting the detected reflected light into an electrical signal.

Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive).

An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains Al.sub.XGa.sub.(1-X)N (0.4X0.90). The second nitride semiconductor layer contains Al.sub.YGa.sub.(1-Y)N with a film thickness t (nm) satisfying 5t25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy 0.009t+X+0.220.03Y0.009t+X+0.22+0.03.

An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

A scanning system includes a light source configured to emit light as a series of one or more light pulses, a scanner configured to direct the one or more light pulses towards a remote target, and a receiver configured to detect light scattered by the remote target. The receiver includes a light detector element disposed on an ASIC that includes multiple comparators disposed in parallel with one another, and corresponding time-to-digital converters (TDCs) coupled to the comparator. Each of the comparators processes a received electrical signal from the light detector element to produce a digital edge signal when the amplitude of the received electrical signal reaches a particular threshold. A corresponding TDC outputs a time delay value associated with a time at which the received electrical signal reaches the particular threshold.