An electrical readout optical sensor, includes a back metal electrode layer, a semiconductor layer, and a metal or metalloid layer; wherein the semiconductor layer is a main body portion and is divided into a first surface and a second surface; the first surface is provided with a groove structure, and forms a grating; the back metal electrode layer covers the second surface of the semiconductor layer; the metal or metalloid layer covers the first surface of the semiconductor layer, and forms a phototube for generating a photocurrent signal having a wide wavelength range and high linearity. An optical sensing structure of narrowband light absorption and a photoelectric conversion structure having a wide wavelength range are directly integrated, and the portable high-precision optical sensing ability is implemented by means of an output mode of a photocurrent.

An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.

Disclosed is a photodetector in which a plurality of conductive stripes spaced apart from each other are bonded onto a two-dimensional semiconductor thin-film, and a pitch between adjacent conductive stripes is controlled to selectively adjust a plasmonic resonance wavelength zone, such that the photodetector has a high absorbance and a wide detection zone at the same time. Further, a manufacturing method thereof is disclosed. The photodetector includes a semiconductor thin-film; and a plurality of conductive stripes bonded onto the semiconductor thin-film and extending in a parallel manner to each other and spaced apart from each other.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

A broad-spectral-bandwidth photodetector designed for use with all types of optical fibers used in different avionics networks and sensors and a process for fabricating such photodetectors. A Schottky barrier photodetector is provided that includes germanium, which has a broad spectral response to light in the ultraviolet to near-infrared range (220 to 1600 nm). The provision of a photodetector having a broad spectral response avoids the use of multiple different types of photodetectors and receivers in an avionics platform with different optical fiber networks and sensors.

The present invention teaches a structure of a photodetector and the method of making thereof. A photodetector inaccordance of the present invention is easy to fabricate, can be fabricated through low temperature processes, has high responsivity, high switching speed and high active area to device area ratio, is able to operate under photovotaic mode or reverse bias conditions.

A detection panel and a manufacturing method of the same are provided. The detection panel includes: a photosensitive element configured to sense a first light beam incident to the photosensitive element to generate a photosensitive signal; a drive circuit configured to be coupled to the photosensitive element to acquire the photosensitive signal from the photosensitive element, the drive circuit including a switch element; and a reflective grating which is on a side of the drive circuit where the first light beam is incident, and is configured to reflect at least a portion of the first light beam incident toward the switch element.

The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.