Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

The disclosure discloses a photoelectric detector and a photoelectric detection device, the photoelectric detector includes: a photosensitive active layer (100) including a first surface (1) and a second surface (2) opposite to each other; a first electrode (200) and a second electrode (300) located on the first surface (1) of the photosensitive active layer (100), and arranged spaced apart from each other; and a third electrode (400) located on the second surface (2) of the photosensitive active layer (100); where the first electrode (200) and the second electrode (300) respectively contact directly with the first surface (1) of the photosensitive active layer (100), and the third electrode (400) contacts directly with the second surface (2) of the photosensitive active layer (100). The photoelectric detector can improve the contrast between light current and dark current.

A photonic infrared detector having at least one metal layer having a broad-band IR absorption and the detector is configured to enable light to make a plurality of passes within a c-Si substrate.

A photodiode according to an embodiment includes a semiconductor substrate, a Schottky junction structure layer disposed on the semiconductor substrate and including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer and fixing potentials of the semiconductor substrate and the first layer.

Aspects and embodiments relate to a plasmonic metamaterial structure, applications and devices including that plasmonic metamaterial structure, and a method of forming that plasmonic metamaterial structure. Aspects and embodiments provide a plasmonic metamaterial structure which comprises: a plurality of optical antenna elements. The plurality of optical antenna elements comprise: a first electrode, a second electrode and a plasmonic nanostructure element located between the first and second electrode to form an electron tunnelling junction between the first and second electrodes. The plurality of optical antenna elements are configured such that the electromagnetic field of one optical antenna element spatially overlaps that of adjacent optical antenna elements and adjacent optical antenna elements are electromagnetically coupled to allow the plurality of optical antenna elements to act as a plasmonic metamaterial. Aspects and embodiments also provide devices including that plasmonic metamaterial structure, and a method of forming that plasmonic metamaterial structure. Aspects and embodiments recognise that the sensitivity of an electron tunnelling junction, coupled with provision of a plurality of optical antenna elements may provide a practical structure which can provide sensing platforms, modulation, light source and nanoscale light source devices and applications.

A semi-reflective display and a method for fabricating and assembling a semi-reflective display are presented, where the display may be comprised of visible light rectifying antenna arrays tuned to four different colors, which when forward biased may use electric power to amplify reflected colored light, and when reversed biased may generate electric power by absorbing light. TFT-tunnel diode logic may be used to control each sub-pixel.

A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In another embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared region (300 nm20 m).

A semi-reflective display and a method for fabricating and assembling a semi-reflective display are presented, where the display may be comprised of visible light rectifying antenna arrays tuned to four different colors, which when forward biased may use electric power to amplify reflected colored light, and when reversed biased may generate electric power by absorbing light. TFT-tunnel diode logic may be used to control each sub-pixel.

The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

This disclosure relates to a Metal-Semiconductor-Metal (MSM) photoelectric detection device, a method of driving the MSM photoelectric detection device, and an X-Ray detector. The device comprises: a plurality of detection units each including: at least one first MSM structure, at least one second MSM structure, a first control unit, a second control unit, a third control unit, a threshold comparison unit, and an energy storage unit, wherein the first control unit is used for controlling the output/reset signal terminal to be connected to or disconnected from the first node; the second control unit is used for controlling the first node to be connected to or disconnected from the second MSM structure; the threshold comparison unit is used for outputting an ON control signal or an OFF control signal; the third control signal is used for connecting or disconnecting the first node to or from the second MSM structure under the control of the control signal outputted by the threshold comparison unit; the energy storage unit is used for storing charges. This disclosure is used for manufacturing the MSM photoelectric detection device.