A semi-reflective display and a method for fabricating and assembling a semi-reflective display are presented, where the display may be comprised of visible light rectifying antenna arrays tuned to four different colors, which when forward biased may use electric power to amplify reflected colored light, and when reversed biased may generate electric power by absorbing light. TFT-tunnel diode logic may be used to control each sub-pixel.

The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.

Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

A photodiode having a reduced dark current includes a semiconductor layer, a first contact part, a second contact part, and an active region. The first contact part disposed in a first region of the semiconductor layer includes an interlayer and at least one metal layer. The second contact part disposed in a second region of the semiconductor layer includes at least one metal layer. The active region is disposed between the first contact part and the second contact part. The first contact part and the second contact part are arranged asymmetrical to each other.

A semi-reflective display and a method for fabricating and assembling a semi-reflective display are presented, where the display may be comprised of visible light rectifying antenna arrays tuned to four different colors, which when forward biased may use electric power to amplify reflected colored light, and when reversed biased may generate electric power by absorbing light. TFT-tunnel diode logic may be used to control each sub-pixel.

This disclosure relates to a Metal-Semiconductor-Metal (MSM) photoelectric detection device, a method of driving the MSM photoelectric detection device, and an X-Ray detector. The device comprises: a plurality of detection units each including: at least one first MSM structure, at least one second MSM structure, a first control unit, a second control unit, a third control unit, a threshold comparison unit, and an energy storage unit, wherein the first control unit is used for controlling the output/reset signal terminal to be connected to or disconnected from the first node; the second control unit is used for controlling the first node to be connected to or disconnected from the second MSM structure; the threshold comparison unit is used for outputting an ON control signal or an OFF control signal; the third control signal is used for connecting or disconnecting the first node to or from the second MSM structure under the control of the control signal outputted by the threshold comparison unit; the energy storage unit is used for storing charges. This disclosure is used for manufacturing the MSM photoelectric detection device.

A device and a method of forming a device. The method comprises forming an oxide material film; forming two metal electrodes on the oxide material film, the two metal electrodes laterally spaced from each other such that an electric path between the two electrodes comprises at least a portion of the oxide material film; configuring the oxide material film such that a current-voltage characteristic of the device as measured via the two metal electrodes exhibits nonlinearity and rectification.

A lidar system operates as an active short-wave infrared (SWIR) camera system to determine a four-dimensional image at each point in a two-dimensional field of regard. The camera system includes a short-wave infrared spectrum scanner that transmits a pulse of light at a particular position or coordinate in a two-dimensional field of regard and a receiver that detects return pulses scattered from a target in the field of regard coincident with the particular position. The receiver includes a detector that detects the returned pulse, a range determination unit that determines, based on the timing of the returned pulse, a distance to the target at the particular position, and an intensity measurement unit that determines the magnitude, amplitude, or intensity of the returned pulse, which information provides an indication of the relative, or in some cases, absolute reflectivity of the target at the particular point in the field of regard.

The method of making a gallium antimonide near infrared photodetector is a physical vapor deposition-based method of forming a thin film of gallium antimonide (GaSb) on a mica substrate for use as a photodetector for light in the near infrared range. Following physical vapor deposition (PVD) of the thin film of GaSb on the mica substrate, a pair of spaced apart electrodes is attached to the thin film of GaSb, thus forming the gallium antimonide near infrared photodetector.

Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.