A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.

The present invention discloses a light sensing unit of a light sensing device including a light sensing element and a switching element. The light sensing element includes a gate, a semiconductor layer, a gate insulating layer, a source, and a drain. The gate and the semiconductor layer are disposed on a substrate, the gate insulating layer separates the gate from the semiconductor layer, and the source and the drain are connected to the semiconductor layer respectively. At least one of the source and the drain are formed of a light-transmissive conductive layer. The semiconductor layer is disposed between one of the source and the drain and the gate, and when viewed along a normal direction of the substrate, the gate overlaps the one of the source and the drain, and the gate does not overlap another one of the source and the drain.

A photosensitive device and a display panel are provided. The photosensitive device includes a substrate and a photosensitive functional layer. The photosensitive functional layer includes a thin film transistor layer and a quantum dot layer. The quantum dot layer is configured to emit an excitation light under an excitation of an external light. A photo-generated current efficiency of the photosensitive device can be improved, and stability and versatility of the photosensitive device can also be improved.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A light sensing device includes a substrate, a gate electrode, a shielding electrode, a insulating layer, a semiconductor layer, a source electrode, and a drain electrode. The gate electrode and the shielding electrode are disposed over the substrate and spaced apart from each other. The insulating layer is disposed over the gate electrode and the shielding electrode. The semiconductor layer is disposed over the insulating layer. The source and drain electrodes are respectively connected to the semiconductor layer, and the semiconductor layer has a channel region between the source and drain electrodes. The channel region is divided into a first region adjacent to the drain electrode and overlapping the gate electrode and a second region adjacent to the source electrode and not overlapping the gate electrode, and the second region partially overlaps the shielding electrode.

A semiconductor structure configured to implement an optically controlled field effect transistor (FET). In one embodiment, a normally-off, optically controlled FET is realized as a semiconductor structure comprising various regions configured to implement a voltage controlled, normally on, high voltage FET region having integrated thereon a photoconductive region configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region so as to turn the FET on.

The present disclosure describes an embodiment of a thin film transistor based light sensor circuit. The thin film transistor based light sensor circuit includes two thin film transistors, in which a channel region of one of the thin film transistors includes a light sensing area and a channel region of the other thin film transistor has a capping material disposed thereon. The thin film transistor based light sensor circuit further includes a comparator device electrically coupled to the two thin film transistors and configured to detect a current difference between the thin film transistors in response to the thin film transistor with the channel region having the light sensing area being exposed to light.

Embodiments of the present application provide an array substrate, a fabrication method for an array substrate, and a display panel. The array substrate includes a substrate, a gate, a gate insulating layer, a seed layer, and a semiconductor layer that are sequentially stacked. A surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains, which enhances light absorption of the semiconductor layer and solves the problems of poor light sensitivity and slow response speed of semiconductor devices.

A light-sensitive sensor, an array substrate, and an electronic equipment are provided. The light-sensitive sensor includes a third metal layer, a second semiconductor layer, and a fourth metal layer. The third metal layer includes a second gate. The second semiconductor layer includes conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer. The fourth metal layer disposed on the second semiconductor layer, and the fourth metal layer includes a second source and a second drain.