A method of transferring a device layer in a SOI wafer obtained by stacking a Si layer, an insulator layer, and the device layer to a transfer substrate, includes a step of temporarily bonding a surface on which the device layer is formed of the SOI wafer to a supporting substrate using an adhesive for temporary bonding, a step of removing the Si layer of the SOI wafer until the insulator layer is exposed and obtaining a thinned device wafer, a step of coating only the transfer substrate with an adhesive for transfer and then bonding the insulator layer in the thinned device wafer to the transfer substrate via the adhesive for transfer, a step of thermally curing the adhesive for transfer under a load at the same time as or after bonding, a step of peeling off the supporting substrate, and a step of removing the adhesive.

An apparatus for manufacturing a semiconductor device includes a stage configured to hold tape adhering to a second surface of a semiconductor wafer having the second surface and a first surface opposite to the second surface, a vacuum mechanism attachable to an upper side of a substrate provided to adhere to the first surface, a driving unit configured to drive the vacuum mechanism in a direction by which the vacuum mechanism is separated from the substrate, and a cooling unit configured to cool the tape.

A method for separating a window includes providing a display device including a display panel, a window disposed on the display panel and including a color layer. An adhesive layer is disposed between the display panel and the window. Heat is applied to the display device. The method includes inserting a disassembling stick between the display panel and the window to separate an edge of the display panel from the window. The method includes cooling the display device. The method includes separating the display panel and the window from each other.

A flexible carrier mount for mounting of a carrier substrate when the carrier substrate is detached from a product substrate, detachment means being provided for debonding the product substrate with bending of the carrier substrate. A device for detaching a carrier substrate from one product substrate in one detachment direction having: a carrier mount flexible in the detachment direction for mounting the carrier substrate, a substrate mount for mounting the product substrate, and detachment means for debonding the carrier substrate from the product substrate with bending of the carrier substrate. A method for detaching a carrier substrate from a product substrate in one detachment direction with the steps: mounting the product substrate with a substrate mount and mounting the carrier substrate with a carrier mount flexible in the detachment direction and debonding the carrier substrate from the product substrate with bending of the carrier substrate.

Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

The present invention provides a laminate including a support substrate, a silicone resin layer and a substrate arranged in this order, in which the silicone resin layer contains at least one metal element selected from the group consisting of 3d transition metals, 4d transition metals, lanthanide metals, and bismuth and in which end portion degradation of a silicone resin layer is suppressed.

Apparatus and methods for mechanically cleaving a bonded wafer structure are disclosed. The apparatus and methods involve clamps that grip the bonded wafer structure and are actuated to cause the bonded structure to cleave.

A measurement method measures bonding strength by peeling off a semiconductor chip bonded to a main surface of a substrate by using a blade having a first tool part, which has a blade angle as a first acute angle, and a second tool part provided on first tool part. The method includes: inserting first tool part along main surface toward a chamfered outer peripheral edge part of chip; while first tool part is inserted into the edge part, peeling off chip from substrate by bringing second tool part provided on first tool part into contact with the edge part of chip and applying a force to chip away from substrate; and measuring bonding strength between substrate and chip based on a length from a contact point where first tool part or second tool part comes into contact with chip to a point where chip and substrate are peeled apart.

A separating apparatus includes a first holder configured to move a first substrate to be away from a second substrate; a second holder; a controller configured to move the first substrate to be away from the second substrate; a light emitting device configured to emit light parallel to a bonding surface between the first substrate and the second substrate; and a light receiving device configured to receive light emitted from the light emitting device. In a case where the light from the light emitting device is not received by the light receiving device due to separation of a part of the first substrate from the second substrate and then the light is received, the controller determines whether separation of the first substrate from the second substrate is completed based on a position or a movement direction of the first holder with respect to the second holder.

Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.