A novel and useful a single layer RFIC/MMIC structure including a package and related redistribution layer (RDL) based low loss grounded coplanar transmission line. The structure includes a package molded around an RF circuit die with a single redistribution layer (RDL) fabricated on the surface thereof mounted on an RF printed circuit board (PCB) via a plurality of solder balls. Coplanar transmission lines are fabricated on the RDL to conduct RF output signals from the die to PCB signal solder balls. The signal trace transition to the solder balls are funnel shaped to minimize insertion loss and maximize RF isolation between channels. A conductive ground shield is fabricated on the single RDL and operative to shield the plurality of coplanar transmission lines. The ground shield is electrically connected to a ground plane on the PCB via a plurality of ground solder balls arranged to surround the plurality of coplanar RF transmission lines and signal solder balls, and are operative to couple the ground shield to the ground plane on the PCB and provide an electrical return path for the plurality of coplanar transmission lines. Ground vias on the printed circuit board can be either located under the ground solder balls or between them.

A coaxial thru-via conductor and a method of fabricating the coaxial thru-via conductor can provide enhanced operations for semiconductor devices mounted on a substrate.

A coaxial thru-via conductor and a method of fabricating the coaxial thru-via conductor can provide enhanced operations for semiconductor devices mounted on a substrate.

In accordance with various embodiments, a multi-layer electromagnetic device is provided. The device includes a first connectivity layer that includes a first conductive pad having a first capacitance, a feed line coupled between the first conductive pad and a transmit signal source, and a first antipad surrounding at least a portion of the first conductive pad that enables an isolation of electromagnetic signals propagating through the first conductive pad. The first antipad has a resonance that is a function of the first capacitance. The device also includes a second connectivity layer that includes a second conductive pad that enables an electrical connectivity to an external device and a plurality of layers positioned between the first connectivity layer and the second connectivity layer. The conductive pads have antipad extensions into available area of the layer as a function of a capacitance of the conductive pads.

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.

A component includes a substrate and electrically conductive layers formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The electrically conductive layers can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first conductive line and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first substrate. The first conductive line is over the first shielding layer. The first IMD layer is between the first substrate and the first conductive line.

A radio-frequency arrangement is described. The radio-frequency arrangement has a first radio-frequency component, a second radio-frequency component and a wiring substrate having a coaxial radio-frequency line formed in the wiring substrate, wherein the first radio-frequency component and the second radio-frequency component are connected via the coaxial radio-frequency line.

A semiconductor package includes a first semiconductor device, a second semiconductor device vertically positioned above the first semiconductor device, and a ground shielded transmission path. The ground shielded transmission path couples the first semiconductor device to the second semiconductor device. The ground shielded transmission path includes a first signal path extending longitudinally between a first end and a second end. The first signal path includes a conductive material. A first insulating layer is disposed over the signal path longitudinally between the first end and the second end. The first insulating layer includes an electrically insulating material. A ground shielding layer is disposed over the insulating material longitudinally between the first end and the second end of the signal path. The ground shielding layer includes a conductive material coupled to ground. The ground shielding layer drives radiation signals received therein to ground to prevent induced noise in the first signal path.

A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.