A microwave circuit integrated on a common semiconductor substrate, includes: a first-stage amplifier to amplify an input high-frequency signal having a first frequency; a main-system amplification stage to amplify and output one signal having the first frequency branched from an output of the first-stage amplifier; a branch stage to generate a signal having double the frequency of the first frequency; and a sub-system amplification stage to amplify and output the signal having double the frequency. An amplification circuit constituting the first-stage amplifier, an amplification circuit included in the branch stage, an amplification circuit included in the main-system amplification stage, and an amplification circuit included in the sub-system amplification stage are connected in series between a power supply and ground in a DC manner, and each is a current reuse type amplifier including two-stage transistors connected in series between a signal input and a signal output in an AC manner.

A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

Embodiments may relate to an semiconductor package. The semiconductor package may include a die coupled with the face of the package substrate. The semiconductor package may further include a waveguide coupled with the face of the package substrate adjacent to the die, wherein the waveguide is to receive an electromagnetic signal from the die and facilitate conveyance of the electromagnetic signal in a direction parallel to the face of the package substrate. Other embodiments may be described or claimed.

A semiconductor device including an Integrated Circuit (IC) package and a plastic waveguide. The IC package includes a semiconductor chip; and an embedded antenna formed within a Redistribution Layer (RDL) coupled to the semiconductor chip, wherein the RDL is configured to transport a Radio Frequency (RF) signal between the semiconductor chip and the embedded antenna. The plastic waveguide is attached to the IC package and configured to transport the RF signal between the embedded antenna and outside of the IC package.

An integrated circuit (IC) die having a first side and a second side opposite the first side is disclosed. The IC die can include a signal via through the IC die. The IC die can include processing circuitry. The IC die can include transition circuitry providing electrical communication between the processing circuitry and the signal via. The transition circuitry can comprise a first transmission line, a second transmission line, and a transition transmission line between the first and second transmission lines. In various embodiments, the first transmission line can comprise a microstrip (MS) line, and the second transmission line can comprise a grounded coplanar waveguide (CPW).

A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.

An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

Disclosed is an antenna apparatus including a radiating layer with a plurality of antenna elements forming an antenna array; a semiconductor wafer including multiple tiles each having beamforming circuits; and a multi-layer interposer. The multi-layer interposer may include: a lower dielectric layer adjacent to the substrate; an upper dielectric layer adjacent to the radiating layer; a metal layer between the lower and upper layers and including a plurality of conductive traces; a plurality of first vias extending through both the upper and lower layers and electrically coupling the beamforming circuits to the plurality of antenna elements; and a plurality of second vias extending between the beamforming circuits and the conductive traces to interconnect the tiles.

A wave communication system includes an integrated circuit and a multilayered substrate. The multilayered substrate is electrically coupled to the integrated circuit. The multilayered substrate includes an antenna structure configured to transmit a circularly polarized wave in response to signals from the integrated circuit.