Provided is a microwave integrated circuit including: a semiconductor substrate; a plurality of amplification units that are formed in the semiconductor substrate; a wiring that is formed in one layer wiring excluding an uppermost layer wiring and a lowermost layer wiring among a plurality of layer wirings formed on the semiconductor substrate and is used for supplying power to the plurality of amplification units; and a plurality of vias that connect a plurality of conductive regions formed in the layer wiring with the wiring interposed therebetween and other conductive regions formed in a region interposing the wiring in the two layer wirings immediately above and immediately below the layer wiring, in which each of the plurality of vias forms a via structure connected to the conductive regions of the lowermost layer wiring by a plurality of other vias.

A semiconductor structure includes a first dielectric waveguide, a second dielectric waveguide, a first inter-level dielectric (ILD) material, a first transmitter coupling structure and a second transmitter coupling structure. The first and second dielectric waveguides are disposed one over the other. The first dielectric waveguide is configured to guide a first electromagnetic signal. The second dielectric waveguide is configured to guide a second electromagnetic signal. The first and second electromagnetic signals have different frequencies. The first ILD material is disposed between the first and second dielectric waveguides. The first transmitter coupling structure is configured to couple a first driver signal generated by a transmitter die to the first dielectric waveguide, and accordingly produce the first electromagnetic signal. The second transmitter coupling structure is configured to couple a second driver signal generated by the transmitter die to the second dielectric waveguide, and accordingly produce the second electromagnetic signal.

Embodiments may relate to an semiconductor package. The semiconductor package may include a die coupled with the face of the package substrate. The semiconductor package may further include a waveguide coupled with the face of the package substrate adjacent to the die, wherein the waveguide is to receive an electromagnetic signal from the die and facilitate conveyance of the electromagnetic signal in a direction parallel to the face of the package substrate. Other embodiments may be described or claimed.

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

An integrated circuit (IC) die having a first side and a second side opposite the first side is disclosed. The IC die can include a signal via through the IC die. The IC die can include processing circuitry. The IC die can include transition circuitry providing electrical communication between the processing circuitry and the signal via. The transition circuitry can comprise a first transmission line, a second transmission line, and a transition transmission line between the first and second transmission lines. In various embodiments, the first transmission line can comprise a microstrip (MS) line, and the second transmission line can comprise a grounded coplanar waveguide (CPW).

A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.

An example device includes: a multilayer build-up package substrate including trace conductor layers spaced from one another by dielectric material, and further including connection conductor layers coupling portions of the trace conductor layers through dielectric material, the multilayer build-up package substrate having a device side surface with one of the trace conductor layers and an opposing board side surface with one of the connection conductor layers; and a waveguide transition formed from the multilayer build-up package substrate, the waveguide transition having an input port formed from the connection conductor layer on the board side surface, and having at least two sub-transitions spaced laterally from one another, the at least two sub-transitions to couple a signal from the input port through the trace conductor layers and the connection conductor layers to a coplanar waveguide formed from the trace conductor layer on the device side surface.

A chip comprising a bonding pad region and a transmission section. The bonding pad region has a first impedance, and is configured for electrical connection to an external transmission line. The transmission section extends away from the bonding pad region and has a second impedance. The bonding pad region is configured to enable field confinement and field matching between the bonding pad region and the external transmission line, and the second impedance is not equal to the first impedance.

The present invention relates to a packaging structure (100) comprising a split-block assembly with a first and a second conducting block section (10A,20A) and at least one transition between a first planar transmission line (2A) and a second transmission line (11A), and one or more input/output ports. The first transmission line (2A) is arranged on a substrate, e.g. an MMIC (1A), disposed on the first conducting block section (10A) and comprises a coupling section (3A), the first conducting block (10A) comprises a cavity (4A) with a cavity opening in an upper surface of the first conducting block section (10A) so arranged that, in an assembled state of the split-block assembly, the coupling section (3A) will be located above, or in, the opening of the cavity (4A), the second transmission line (11A) being in line with the first transmission line (2A) and located on an opposite side of the opening of the cavity (4A). The second conducting block section (20A) acts as a lid in an assembled state of the packaging structure. One of the conducting block sections is provided with a high impedance surface (15A) in a transition region along or facing the first (2A) and second (11A) transmission lines, a narrow gap being provided between the high impedance surface region (15A) and the opposing surface of the other conducting block section (10A) at least in the transition region such that the transition will be contactless without any galvanic contact between the first and second transmission lines (2A,11A).