A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.

A microwave circuit integrated on a common semiconductor substrate, includes: a first-stage amplifier to amplify an input high-frequency signal having a first frequency; a main-system amplification stage to amplify and output one signal having the first frequency branched from an output of the first-stage amplifier; a branch stage to generate a signal having double the frequency of the first frequency; and a sub-system amplification stage to amplify and output the signal having double the frequency. An amplification circuit constituting the first-stage amplifier, an amplification circuit included in the branch stage, an amplification circuit included in the main-system amplification stage, and an amplification circuit included in the sub-system amplification stage are connected in series between a power supply and ground in a DC manner, and each is a current reuse type amplifier including two-stage transistors connected in series between a signal input and a signal output in an AC manner.

According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.

A circuit substrate of an extremely high frequency electronic component having an organic substrate material and at least one hollow space incorporated into the substrate material, the hollow space being provided, on at least part of its peripheral surfaces, with a metal layer and acting as a hollow waveguide for electrical signals with a carrier frequency of 10 GHz or higher, and being directly adjacent to an active component part, and thereby being electrically connected with such an active component part, or being electrically connected with it through a metal lead, in particular a strip line projecting into the hollow space.

Waveguide structures are built into integrated circuit devices using standard processing steps for semiconductor device fabrication. A waveguide may include a base, a top, and two side walls. At least one of the walls (e.g., the base or the top) may be formed in a metal layer. The base or top may be patterned to provide a transition to a planar transmission line, such as a coplanar waveguide. The side walls may be formed using vias.

A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.

Embodiments include package structures having integrated waveguides to enable high data rate communication between package components. For example, a package structure includes a package substrate having an integrated waveguide, and first and second integrated circuit chips mounted to the package substrate. The first integrated circuit chip is coupled to the integrated waveguide using a first transmission line to waveguide transition, and the second integrated circuit chip is coupled to the integrated waveguide using a second transmission line to waveguide transition. The first and second integrated circuit chips are configured to communicate by transmitting signals using the integrated waveguide within the package carrier.

Disclosed herein is a stripline interconnect system for high-frequency signal transmission. The interconnect is positioned within a recessed area of a substrate, enabling a reduced height. Included in this design is a dielectric ramp, manufactured on the substrate, that facilitates a smooth transition from transmission dielectric to height of the wafer. Formed using aerosol jet printing, a center conductor extends from the substrate, traverses the dielectric ramp, and connects to wafer pads. To provide for electromagnetic confinement and reduce external interferences, a dielectric is printed over the center conductor, forming an arch, which is subsequently shielded with a printed metal covering. This design provides for reduced insertion and reflection losses, low dispersion, and increased signal isolation. This stripline interconnect is of particular interest for applications desiring precise high-frequency signal transmission between integrated circuit wafers and external circuitry.

An electronic device includes a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.

A compact integrated circuit (IC) that outputs millimeter-wave energy can be assembled into a highly compact package that can utilize ultrasmall contacts and/or contacts arrange with nonstandard pitch. The millimeter-wave IC can be assembled onto an interposer that includes an integrated transition configured to be coupled to a millimeter-wave waveguide on a printed circuit board having contacts that have a standardized size and pitch.