A semiconductor device includes a semiconductor element, a lead on which the semiconductor element is mounted, a bonding member fixing the semiconductor element to the lead, and a resin package enclosing the semiconductor element and a portion of the lead. This lead is formed with a groove recessed at a location spaced from the semiconductor element. The groove has first and second inner surfaces, where the first inner surface is closer to the semiconductor element than is the second inner surface. The angle the first inner surface forms with respect to the thickness direction of the semiconductor element is smaller than the angle the second inner surface forms with respect to the thickness direction.

Packaging methods for semiconductor devices and methods of packaging thereof are disclosed. In some embodiments, a device includes a packaging apparatus and contact pads disposed on the packaging apparatus. The contact pads are arranged in an array of rows and columns. The contact pads include first contact pads proximate a perimeter region of the packaging apparatus and second contact pads disposed in an interior region of the packaging apparatus. A dam structure that is continuous is disposed around the second contact pads. The contact pads comprise a mounting region for a semiconductor device.

A solution relating to electronic devices of flip-chip type is provided, which includes at least one chip carrier having a carrier surface, the carrier(s) including one or more contact elements of electrically conductive material on the carrier surface, at least one integrated circuit chip having a chip surface, the chip(s) including one or more terminals of electrically conductive material on the chip surface each one facing a corresponding contact element, solder material soldering each terminal to the corresponding contact element, and a restrain structure around the contact elements for restraining the solder material during a soldering of the terminals to the contact elements. The carrier includes one or more heat dissipation elements of thermally conductive material on the carrier surface facing the chip surface displaced from the terminals, the dissipation elements being free of any solder mask.

A solution relating to electronic devices of flip-chip type is provided, which includes at least one chip carrier having a carrier surface, the carrier(s) including one or more contact elements of electrically conductive material on the carrier surface, at least one integrated circuit chip having a chip surface, the chip(s) including one or more terminals of electrically conductive material on the chip surface each one facing a corresponding contact element, solder material soldering each terminal to the corresponding contact element, and a restrain structure around the contact elements for restraining the solder material during a soldering of the terminals to the contact elements. The carrier includes one or more heat dissipation elements of thermally conductive material on the carrier surface facing the chip surface displaced from the terminals, the dissipation elements being free of any solder mask.

A semiconductor device includes a semiconductor element, a lead on which the semiconductor element is mounted, a bonding member fixing the semiconductor element to the lead, and a resin package enclosing the semiconductor element and a portion of the lead. This lead is formed with a groove recessed at a location spaced from the semiconductor element. The groove has first and second inner surfaces, where the first inner surface is closer to the semiconductor element than is the second inner surface. The angle the first inner surface forms with respect to the thickness direction of the semiconductor element is smaller than the angle the second inner surface forms with respect to the thickness direction.

The present application is applicable to the field of semiconductor technology and provides a method for packaging stacking a flip chip, which includes: placing a filling template on a substrate, the filling template being provided with a through hole of a preset pattern; filling a filling material into the through hole of the filling template, and after the filling material being formed on the substrate, removing the filling template; placing a chip with solder balls on the substrate formed with the filling material, such that at least a portion of the solder balls being covered by the filling material; and connecting the chip to the substrate through the solder balls, and curing the filling material with air gaps formed between the at least a portion of the solder balls covered with the filling material.

The present technology is directed to manufacturing collars for under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (UBM) structure is formed over the semiconductor material and is electrically coupled to corresponding interconnects. A collar surrounds at least a portion of the side surface of the UBM structure, and a solder material is disposed over the top surface of the UBM structure.

The present technology is directed to manufacturing collars for under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (UBM) structure is formed over the semiconductor material and is electrically coupled to corresponding interconnects. A collar surrounds at least a portion of the side surface of the UBM structure, and a solder material is disposed over the top surface of the UBM structure.

The present technology is directed to manufacturing collars for under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (UBM) structure is formed over the semiconductor material and is electrically coupled to corresponding interconnects. A collar surrounds at least a portion of the side surface of the UBM structure, and a solder material is disposed over the top surface of the UBM structure.

A chip packaging method using a hydrophobic surface includes forming superhydrophobic surfaces forming hydrophilic surfaces on predetermined positions of the superhydrophobic surfaces formed on the one of a first chip or the first board and the one of a second chip or a second board, respectively, generating liquid metal balls on the hydrophilic surfaces formed on the one of the first chip or the first board and the one of the second chip or the second board, respectively, and packaging the one of the first chip or the first board and the one of the second chip or the second board by combing the liquid metal ball of the one of the first chip or the first board and the liquid metal ball of the one of the second chip or the second board with each other.