A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.

A semiconductor device includes a semiconductor body, a stress relieving layer or layer stack disposed over at least part of the semiconductor body, the stress relieving layer or layer stack comprising a plurality of openings which yield a patterned surface topography for the stress relieving layer or layer stack, and a metal layer or layer stack formed on the stress relieving layer or layer stack and occupying the plurality of openings in the stress relieving layer or layer stack. The patterned surface topography of the stress relieving layer or layer stack is transferred to a surface of the metal layer or layer stack facing away from the semiconductor body. The stress relieving layer or layer stack has a different elastic modulus than the metal layer or layer stack over a temperature range.

A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.

CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a plurality of dielectric patterns, a first conductive element and a second conductive element. The semiconductor substrate has a pixel region and a circuit region. The dielectric patterns are disposed between the first portion and the second portion, wherein top surfaces of the plurality of dielectric patterns are lower than top surfaces of the first and second portions. The first conductive element is disposed below the plurality of dielectric patterns. The second conductive element inserts between the plurality of dielectric patterns to electrically connect the first conductive element.

CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.

CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.

Packaging devices and methods of manufacture thereof for semiconductor devices are disclosed. In some embodiments, a packaging device includes a contact pad disposed over a substrate, and a passivation layer disposed over the substrate and a first portion of the contact pad. A post passivation interconnect (PPI) line is disposed over the passivation layer and is coupled to a second portion of the contact pad. A PPI pad is disposed over the passivation layer. A transition element is disposed over the passivation layer and is coupled between the PPI line and the PPI pad. The transition element comprises a first side and a second side coupled to the first side. The first side and the second side of the transition element are non-tangential to the PPI pad.

A Wafer-level chip scale package (WLCSP) includes a semiconductor structure and a first bonding pad formed over a portion of the semiconductor structure. The WLCSP further includes a passivation layer formed over the semiconductor structure and the first bonding pad, exposing portions of the first bonding pad. The WLCSP further includes a conductive redistribution layer formed over the passivation layer and the portions of the first bonding pad exposed by the passivation layer. The WLCSP further includes a planarization layer formed over the passivation layer and the conductive redistribution layer, exposing a portion of the conductive redistribution layer. The WLCSP further includes an under-bump-metallurgy (UBM) layer formed over the planarization layer and a conductive bump formed over the UBM layer.

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.