A groove is formed between an inner peripheral edge of an opening of a pad electrode and an outer peripheral edge of a bonding region located inside the pad electrode in plan view.

The present technology relates to a semiconductor device including semiconductor dies formed with vertical die bond pads on an edge of the dies. During wafer fabrication, vertical bond pad blocks are formed in scribe lines of the wafer and electrically coupled to the die bond pads of the semiconductor dies. The vertical bond pad blocks are cut through during wafer dicing, thereby leaving large, vertically oriented pads exposed on a vertical edge of each semiconductor die.

The present technology relates to a semiconductor device including semiconductor dies formed with vertical die bond pads on an edge of the dies. During wafer fabrication, vertical bond pad blocks are formed in scribe lines of the wafer and electrically coupled to the die bond pads of the semiconductor dies. The vertical bond pad blocks are cut through during wafer dicing, thereby leaving large, vertically oriented pads exposed on a vertical edge of each semiconductor die.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A semiconductor package includes: a package substrate; a first semiconductor chip disposed over the package substrate and having a center region and an edge region; and a package redistribution layer disposed over the first semiconductor chip, wherein the first semiconductor chip comprises: a lower structure; a redistribution conductive layer disposed over the lower structure and electrically connected to the lower structure, the redistribution conductive layer including a redistribution pad disposed in the center region; and a protective layer covering the lower structure and the redistribution conductive layer, and having an opening exposing the redistribution pad, wherein the package redistribution layer comprises: a package redistribution conductive layer connected to the redistribution pad and extending to the edge region, the package redistribution conductive layer including a package redistribution pad disposed in the edge region, and, wherein, in the edge region, the redistribution conductive layer is omitted.

A semiconductor package includes: a package substrate; a first semiconductor chip disposed over the package substrate and having a center region and an edge region; and a package redistribution layer disposed over the first semiconductor chip, wherein the first semiconductor chip comprises: a lower structure; a redistribution conductive layer disposed over the lower structure and electrically connected to the lower structure, the redistribution conductive layer including a redistribution pad disposed in the center region; and a protective layer covering the lower structure and the redistribution conductive layer, and having an opening exposing the redistribution pad, wherein the package redistribution layer comprises: a package redistribution conductive layer connected to the redistribution pad and extending to the edge region, the package redistribution conductive layer including a package redistribution pad disposed in the edge region, and, wherein, in the edge region, the redistribution conductive layer is omitted.

A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.

An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.