A semiconductor package is provided. The semiconductor package includes a chip pad of a semiconductor chip, the chip pad including a connection portion and a test portion in a first surface of the chip pad; a barrier layer covering the chip pad, the barrier layer defining a first opening and a second opening that is separate from the first opening, the first opening exposing the connection portion of the chip pad, and the second opening exposing the test portion of the chip pad; and a redistribution structure.

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

A semiconductor device includes a first semiconductor structure including circuit devices and first bonding pads; and a second semiconductor structure connected to the first semiconductor structure, the second semiconductor structure including a base layer; a first memory cell structure including first gate electrodes and first channels penetrating through the first gate electrodes; a second memory cell structure including second gate electrodes and second channels penetrating through the second gate electrodes; bit lines between the first and the second memory cell structures, and electrically connected to the first and second channels in common; first and second conductive layers on the second surface of the base layer; a pad insulating layer having an opening exposing a portion of the second conductive layer; and second bonding pads disposed to correspond to the first bonding pads in a lower portion of the second memory cell structure.

In a described example, a device includes an overcoat layer covering an interconnect; an opening in the overcoat layer exposing a portion of a surface of the interconnect; a stud on the exposed portion of the surface of the interconnect in the opening; a surface of the stud approximately coplanar with a surface of the overcoat layer; and a conductive pillar covering the stud and covering a portion of the overcoat layer surrounding the stud, the conductive pillar having a planar and un-dished surface facing away from the stud and the overcoat layer.

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

A method of manufacturing a semiconductor device includes: forming a base portion of a bonding pad on a semiconductor portion, the base portion further comprising a base layer; forming a main surface of the bonding pad, the main surface comprising a bonding region; bonding a bond wire or clip to the bonding region; and forming a supplemental structure directly on the base portion. The supplemental structure laterally adjoins the bond wire or clip or is laterally spaced apart from the bond wire or clip. A volume-related specific heat capacity of the supplemental structure is higher than a volume-related specific heat capacity of the base layer.

A semiconductor device includes a bonding pad that includes a base portion having a base layer. A bond wire or clip is bonded to a bonding region of a main surface of the bonding pad. A supplemental structure is in direct contact with the base portion next to the bonding region. A specific heat capacity of the supplemental structure is higher than a specific heat capacity of the base layer.

A semiconductor device includes a first semiconductor structure including circuit devices and first bonding pads; and a second semiconductor structure connected to the first semiconductor structure, the second semiconductor structure including a base layer; a first memory cell structure including first gate electrodes and first channels penetrating through the first gate electrodes; a second memory cell structure including second gate electrodes and second channels penetrating through the second gate electrodes; bit lines between the first and the second memory cell structures, and electrically connected to the first and second channels in common; first and second conductive layers on the second surface of the base layer; a pad insulating layer having an opening exposing a portion of the second conductive layer; and second bonding pads disposed to correspond to the first bonding pads in a lower portion of the second memory cell structure.

A semiconductor package is provided. The semiconductor package includes a chip pad of a semiconductor chip, the chip pad including a connection portion and a test portion in a first surface of the chip pad; a barrier layer covering the chip pad, the barrier layer defining a first opening and a second opening that is separate from the first opening, the first opening exposing the connection portion of the chip pad, and the second opening exposing the test portion of the chip pad; and a redistribution structure.

In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.