Multi-chip modules may include stacked semiconductor devices having spacers therebetween. Discrete conductive elements may extend over the active surface of an underlying semiconductor device from respective bond pads of the underlying semiconductor device, through a space formed by the spacers, to respective contact areas on a substrate. Each discrete conductive element extending through two side openings opposite one another may extend from a respective centrally located bond pad proximate to a central portion of the active surface of the underlying semiconductor device. Each discrete conductive element extending through another, perpendicular opening may extend from a respective peripheral bond pad located proximate to a peripheral portion of the active surface of the underlying semiconductor device.

A semiconductor package includes a semiconductor substrate, an interconnect structure disposed over the substrate, a first passivation layer disposed over an interconnect structure, a contact pad disposed over the first passivation layer, a dummy disposed around the contact pad and over the first passivation layer, and a second passivation layer overlaying the dummy and the contact pad.

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a die, a dummy cube, a stress relaxation layer, an encapsulant and a redistribution structure. The dummy cube is disposed beside the die. The stress relaxation layer covers a top surface of the dummy cube. The encapsulant encapsulates the die and the dummy cube. The redistribution structure is disposed over the encapsulant and is electrically connected to the die. The stress relaxation layer is interposed between the dummy cube and the redistribution structure.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating materialsuch as a low- dielectric materialat least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating materialsuch as a low-low- dielectric materialat least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

A semiconductor device includes a first substrate, a through substrate via, a second substrate, and a bonding structure. The first substrate includes a first dielectric material, and the first dielectric material includes a first conductive pad embedded therein. The through substrate via is formed in the first substrate. The second substrate includes a second dielectric material, the second dielectric material includes a second conductive pad embedded therein, the first dielectric material is different from the second dielectric material, the second conductive pad has a first height, the second dielectric material has a second height, and the first height is less than the second height. The bonding structure is formed between the first substrate and the second substrate, wherein the bonding structure includes the first conductive pad bonded to the second conductive pad and the first dielectric material bonded to the second dielectric material.

A semiconductor device includes a semiconductor substrate, a passivation layer overlying the semiconductor substrate, and an interconnect structure overlying the passivation layer. The interconnect structure includes a landing pad region and a dummy region electrically separated from each other. A protective layer is formed on the interconnect structure and has a first opening exposing a portion of the landing pad region and a second opening exposing a portion of the dummy region. A metal layer is formed on the exposed portion of landing pad region and the exposed portion of the dummy region. A bump is formed on the metal layer overlying the landing pad region.