A chip structure is provided. The chip structure includes a substrate. The chip structure includes a redistribution layer over the substrate. The chip structure includes a bonding pad over the redistribution layer. The chip structure includes a shielding pad over the redistribution layer and surrounding the bonding pad. The chip structure includes an insulating layer over the redistribution layer and the shielding pad. The chip structure includes a bump over the bonding pad and the insulating layer. A sidewall of the bump is over the shielding pad.

A semiconductor wafer includes: a first main surface and a second main surface opposite the first main surface; a detachment plane parallel to the first main surface inside the semiconductor wafer, the detachment plane defined by defects; electronic semiconductor components formed at the first main surface and between the first main surface and the detachment plane; and a glass structure attached to the first main surface. The glass structure includes openings, each of which leaves a respective area of the electronic semiconductor components uncovered. A method of processing the wafer, a clip, and a semiconductor device are also described.

The present technology relates to an electronic substrate that achieves a reduction in the size of a substrate and enables a void risk in an underfill to be reduced, and an electronic apparatus. An electronic substrate in one aspect of the present technology includes: an electronic chip that is placed above a substrate; an electrode that exists between the substrate and the electronic chip and electrically connects the substrate and the electronic chip; an underfill with which a space between the substrate and the electronic chip is filled so that the electrode is sealed and protected; a protection target to be protected from inflow of the underfill, the protection target being formed on the substrate; and an underfill inflow prevention unit that is formed in the substrate so as to surround an entirety or a portion of the protection target. The present technology is applicable to, for example, a solid-state image sensor.

A semiconductor package includes a connection structure, a semiconductor chip, and an encapsulant. The connection structure includes an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer. The semiconductor chip has an active surface on which connection pads are disposed and an inactive surface opposing the active surface, and the active surface is disposed on the connection structure to face the connection structure. The encapsulant covers at least a portion of the semiconductor chip. The semiconductor chip includes a groove formed in the active surface and a dam structure disposed around the groove in the active surface.

A semiconductor package includes a connection structure, a semiconductor chip, and an encapsulant. The connection structure includes an insulating layer, a redistribution layer disposed on the insulating layer, and a connection via penetrating through the insulating layer and connected to the redistribution layer. The semiconductor chip has an active surface on which connection pads are disposed and an inactive surface opposing the active surface, and the active surface is disposed on the connection structure to face the connection structure. The encapsulant covers at least a portion of the semiconductor chip. The semiconductor chip includes a groove formed in the active surface and a dam structure disposed around the groove in the active surface.

A package structure includes a die, an encapsulant, a dam structure, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The encapsulant encapsulates sidewalls of the die. The encapsulant has a first surface and a second surface opposite to the first surface. The first surface is coplanar with the rear surface of the die. The second surface is located at a level height different from the active surface of the die. The dam structure is disposed on the active surface of the die. A top surface of the dam structure is substantially coplanar with the second surface of the encapsulant. The redistribution structure is over the encapsulant, the dam structure, and the die. The redistribution structure is electrically connected to the die.

A chip structure is provided. The chip structure includes a substrate. The chip structure includes a redistribution layer over the substrate. The chip structure includes a bonding pad over the redistribution layer. The chip structure includes a shielding pad over the redistribution layer and surrounding the bonding pad. The chip structure includes an insulating layer over the redistribution layer and the shielding pad. The chip structure includes a bump over the bonding pad and the insulating layer. A sidewall of the bump is over the shielding pad.

A method of soldering a semiconductor chip to a chip carrier includes arranging a solder deposit including solder and solder flux between a contact portion of the carrier and a contact portion of a chip pad arranged at a surface of the semiconductor chip. Arranging a dielectric layer at the surface of the semiconductor chip. The dielectric layer includes an opening within which the contact portion of the chip pad is exposed. The dielectric layer further includes arranging a solder flux outgassing trench separate from the opening and intersecting with the solder deposit. The method further includes melting the solder deposit which causes liquid solder to be moved over the solder flux outgassing trench for extraction of flux gas.

A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.