The present disclosure provides a semiconductor device. The semiconductor device includes a first die and a conductive layer. The first die is to be bonded with, in a direction, a second die external to the semiconductor device. The conductive layer, between the first die and the second die in the direction, has a reference ground.

A chip structure is provided. The chip structure includes a substrate. The chip structure includes a redistribution layer over the substrate. The chip structure includes a bonding pad over the redistribution layer. The chip structure includes a shielding pad over the redistribution layer and surrounding the bonding pad. The chip structure includes an insulating layer over the redistribution layer and the shielding pad. The chip structure includes a bump over the bonding pad and the insulating layer. A sidewall of the bump is over the shielding pad.

The present disclosure provides a semiconductor device. The semiconductor device includes a first die and a conductive layer. The first die is to be bonded with, in a direction, a second die external to the semiconductor device. The conductive layer, between the first die and the second die in the direction, has a reference ground.

The present disclosure provides a semiconductor device. The semiconductor device includes a first die and a conductive layer. The first die is to be bonded with, in a direction, a second die external to the semiconductor device. The conductive layer, between the first die and the second die in the direction, has a reference ground.

A bonded assembly includes a first semiconductor die containing a first substrate, first semiconductor devices, and first bonding pads laterally surrounded by a first pad-level dielectric layer. The first pad-level dielectric layer includes at least one first encapsulated airgap located between neighboring pairs of first bonding pads and encapsulated by a first dielectric fill material of the first pad-level dielectric layer. The bonded assembly includes a second semiconductor die containing a second substrate, second semiconductor devices, and second bonding pads laterally surrounded by a second pad-level dielectric layer. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

Provided is a die stack structure including a first die, a second die, a first bonding structure, and a second bonding structure. The first bonding structure is disposed on a back side of the first die. The second bonding structure is disposed on a front side of the second die. The first die and the second die are bonded together via the first bonding structure and the second bonding structure and a bondable topography variation of a surface of the first bonding structure bonding with the second bonding structure is less than less than 1 m per 1 mm range. A method of manufacturing the die stack structure is also provided.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.