A semiconductor die includes a semiconductor surface including circuitry electrically connected to top-level bond pads exposed on a top surface of the semiconductor die, the top-level bond pads including inner bond pads and outer bond pads positioned beyond the inner bond pads. There is solder on at least the inner bond pads. A ring structure is positioned around a location of at least the inner bond pads.

A semiconductor structure may be provided, including a conductive pad, a slot arranged through the conductive pad, a passivation layer arranged over the conductive pad and a plurality of electrical interconnects arranged under the conductive pad. The conductive pad may include an electrically conductive material and the slot may include an electrically insulating material. The passivation layer may include an opening that may expose a portion of the conductive pad and the slot may be arranged laterally between the exposed portion of the conductive pad and the plurality of electrical interconnects.

A fan-out wafer level package structure includes a chip, a molding compound, at least one circuit layer, and at least one dielectric layer. The molding compound encapsulates the chip. The at least one circuit layer is disposed on a surface of the chip and a surface of the molding compound coplanar to the surface of the chip. The at least one circuit layer includes a plurality of traces. Each of the traces includes a first portion and a second portion. The first portion is located at an edge region of a projection of the chip onto the dielectric layer. A width of the first portion is larger than a width of the second portion. The at least one dielectric layer is disposed at a side of the at least one circuit layer.

Provided is a semiconductor device including a substrate, a pad, a protective layer, a plurality of convex patterns, a redistribution layer (RDL), and a bump. The pad is disposed on the substrate. The protective layer is disposed on the substrate. The protective layer has a first opening exposing a portion of a surface of the pad. The convex patterns are disposed on the protective layer. The RDL is disposed on the convex patterns. The RDL extends from the pad to the convex patterns. The bump is disposed on the convex patterns.

Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation. A recess may be repeated in a stepped reticule pattern at the wafer level, for example, or placed by an aligner or alignment process.

A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

A semiconductor package includes a semiconductor substrate, an interconnect structure disposed over the substrate, a first passivation layer disposed over an interconnect structure, a contact pad disposed over the first passivation layer, a dummy pattern disposed around the contact pad and over the first passivation layer, and a second passivation layer overlaying the dummy pattern and the contact pad.

A method may include forming a metal pattern in a metal layer of a fabricated integrated circuit device and under a target bump of the fabricated integrated circuit device, wherein the metal pattern has an inner shape and an outer field such that a void space in the metal layer is created between the inner shape and the outer field and approximately centering the void space on an outline of an under-bump metal formed under the target bump with a keepout distance from the inner shape and the outer field on either side of the outline such that the metal minimizes local variations in mechanical stress on underlying structures within the fabricated integrated circuit device.

Disclosed is a micro LED display having a multi-color pixel array and a method of fabricating the same based on integration with a driving circuit thereof. According to various embodiments, the display may be fabricated by providing an IC device in which a driving circuit has been wired, forming, in one surface of the IC device, a plurality of pixels on which a plurality of partial pixels for emitting different color lights has been stacked, and electrically connecting the partial pixels to the driving circuit using connection members.

The present application discloses a semiconductor device with two stress-relieving structures and a method for fabricating the semiconductor device. The semiconductor device includes a semiconductor substrate, a first stress-relieving structure including a first conductive frame positioned above the semiconductor substrate and a plurality of first insulating pillars positioned within the conductive frame, a second stress-relieving structure including a plurality of second conductive pillars positioned above the first stress-relieving structure and a second insulating frame, the plurality of second conductive pillars is positioned within the second insulating frame, and a conductive structure including a supporting portion positioned above the second stress-relieving structure, a conductive portion positioned adjacent to the supporting portion, and a plurality of spacers attached to two sides of the conductive portion. The plurality of second conductive pillars is disposed correspondingly above the plurality of first insulating pillars, and the second insulating frame is disposed correspondingly above the first conductive frame.