Patent classifications
H01L2224/0226
Hybrid bonded structure
A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH STRESS-RELIEVING STRUCTURES
The present application provides a method for fabricating a semiconductor device including providing a semiconductor substrate, forming a first stress-relieving structure including a first conductive frame above the semiconductor substrate and a plurality of first insulating pillars within the first conductive frame, forming a second stress-relieving structure comprising a plurality of second conductive pillars above the first stress-relieving structure and a second insulating frame, the plurality of second conductive pillars are disposed within the second conductive frame, wherein the plurality of second conductive pillars is disposed correspondingly above the plurality of first insulating pillars, and the second insulating frame is disposed correspondingly above the first conductive frame; and forming a conductive structure including a supporting portion above the second stress-relieving structure, a conductive portion adjacent to the supporting portion, and a plurality of spacers attached to two sides of the conductive portion.
CONTACT PAD STRUCTURES AND METHODS FOR FABRICATING CONTACT PAD STRUCTURES
A semiconductor structure may be provided, including a conductive pad, a slot arranged through the conductive pad, a passivation layer arranged over the conductive pad and a plurality of electrical interconnects arranged under the conductive pad. The conductive pad may include an electrically conductive material and the slot may include an electrically insulating material. The passivation layer may include an opening that may expose a portion of the conductive pad and the slot may be arranged laterally between the exposed portion of the conductive pad and the plurality of electrical interconnects.
Semiconductor device with stress-relieving structures and method for fabricating the same
The present application discloses a semiconductor device with two stress-relieving structures and a method for fabricating the semiconductor device. The semiconductor device includes a semiconductor substrate, a first stress-relieving structure including a first conductive frame positioned above the semiconductor substrate and a plurality of first insulating pillars positioned within the conductive frame, a second stress-relieving structure including a plurality of second conductive pillars positioned above the first stress-relieving structure and a second insulating frame, the plurality of second conductive pillars is positioned within the second insulating frame, and a conductive structure including a supporting portion positioned above the second stress-relieving structure, a conductive portion positioned adjacent to the supporting portion, and a plurality of spacers attached to two sides of the conductive portion. The plurality of second conductive pillars is disposed correspondingly above the plurality of first insulating pillars, and the second insulating frame is disposed correspondingly above the first conductive frame.
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH STRESS RELIEF STRUCTURE
The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH STRESS RELIEF STRUCTURE
The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.
SEMICONDUCTOR PACKAGE
A semiconductor package is provided. The semiconductor package includes a first conductive layer, a plurality of first conductive pads, a plurality of second conductive pads, and a first dielectric layer. The first conductive pads are electrically connected to the first conductive layer. The second conductive pads are electrically disconnected from the first conductive layer.
SEMICONDUCTOR PACKAGE
A semiconductor package is provided. The semiconductor package includes a first conductive layer, a plurality of first conductive pads, a plurality of second conductive pads, and a first dielectric layer. The first conductive pads are electrically connected to the first conductive layer. The second conductive pads are electrically disconnected from the first conductive layer.
SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.
SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE
A semiconductor device having a three-dimensional structure includes a first wafer including a first bonding pad on one surface thereof; a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer; a plurality of anti-warpage grooves on the one surface of the first wafer, and laid out in a stripe shape; and a plurality of anti-warpage ribs on the one surface of the second wafer and coupled respectively to the plurality of anti-warpage grooves, and laid out in a stripe shape.