In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

Methods, inks, apparatus, and systems for forming metal features on semiconductor substrates are provided herein. Advantageously, the techniques herein do not require the use of photoresist, and can be accomplished without many of the processes and apparatuses used in the conventional process flow. Instead, electrohydrodynamic ejection printing is used to deposit an ink that includes an electroplating additive such as accelerator or inhibitor. The printed substrate can then be electroplated in a preferential deposition process that achieves a first deposition rate on areas of the substrate where the ink is present and a second deposition rate on areas of the substrate where the ink is absent, the first and second deposition rates being different from one another. After electroplating, chemical etching may be used to spatially isolate the preferentially grown metal features from one another.

There is provided a flexible electronic structure for bonding with an external circuit, comprising a flexible substrate, having a first surface, configured for bonding with the external circuit, and an opposing second surface, configured for engagement with a bonding tool, comprising at least one electronic component; at least one contact member, operatively coupled with said at least one electronic component and provided at said first surface of said flexible substrate, and adapted to operably interface with the external circuit after bonding, and at least one shield member, provided at said first surface so as to shieldingly overlap at least a portion of said at least one electronic component, adapted to withstand a predetermined pressure applied to said first surface and/or said opposing second surface during bonding with the external circuit.

There is provided a flexible electronic structure for bonding with an external circuit. The flexible electronic structure comprising: a flexible body having a first surface, the flexible body comprising at least one electronic component; at least one contact element configured to bond with the external circuit, the at least one contact element operatively coupled with the at least one electronic component and provided at the first surface of the flexible body, and arranged to operably interface with the external circuit after bonding, and at least one support element provided at the first surface of the flexible body, each support element arranged to contact a corresponding surface element disposed on a first surface of an external structure comprising the external circuit.

Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.