A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.

To reduce radio frequency losses during operation of a radio frequency integrated circuit module, the radio frequency integrated circuit module is fabricated such that at least one of an edge of the wirebond pad on the copper trace and a sidewall of the copper trace is free from high-resistivity plating material. The unplated portion provides a path for the radio frequency current to flow around the high-resistivity material, which reduces the radio frequency signal loss associated with the high resistivity plating material.