Implementations of a semiconductor device may include a semiconductor die including a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof where the semiconductor die may be coupled with one of a substrate, a leadframe, an interposer, a package, a bonding surface, or a mounting surface. The thickness may be between 0.1 microns and 125 microns.

A semiconductor package includes a die comprising at least a via and a least a hot via; a ground lead, formed directly under a back side of the die, contacting with the back side of the die, and directly connected to the a least a hot via and the at least a via of the die; a buffer layer, formed on the die, configured to absorb a stress applied to the die and prevent the die from damage; and a molding portion, formed on the die buffer layer.

According to various embodiments, a method for processing an electronic component including at least one electrically conductive contact region may include: forming a contact pad including a self-segregating composition over the at least one electrically conductive contact region to electrically contact the electronic component; forming a segregation suppression structure between the contact pad and the electronic component, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.

According to various embodiments, a method for processing an electronic component including at least one electrically conductive contact region may include: forming a contact pad including a self-segregating composition over the at least one electrically conductive contact region to electrically contact the electronic component; forming a segregation suppression structure between the contact pad and the electronic component, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.

A method for interconnecting two conductors includes creating a first nickel layer on a first conductor of an electrical component, producing a first non-gold protective layer on the first nickel layer, the first non-gold protective layer being configured to prevent the first nickel layer from oxidizing, creating a second nickel layer on a second conductor, producing a second non-gold protective layer on the second nickel layer, the second non-gold protective layer being configured to prevent the second nickel layer from oxidizing, and interconnecting the first and second nickel layers using a solder layer that interfaces with the first and second nickel layers between the first and second conductors.

A semiconductor device includes a semiconductor die. The semiconductor die includes a device layer, an interconnect layer over the device layer, a conductive pad over the interconnect layer, a conductive seed layer directly on the conductive pad, and a passivation layer encapsulating the conductive pad and the conductive seed layer. The conductive pad is between the interconnect layer and the conductive seed layer.

Mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through an opening. The semiconductor device further includes a post-passivation interconnect layer over the passivation layer and coupled to the second portion of the contact pad. In addition, the semiconductor device includes a bump over the post-passivation interconnect layer and outside of the opening. The semiconductor device also includes a diffusion barrier layer physically insulating the bump from the post-passivation interconnect layer while electrically connecting the bump to the post-passivation interconnect layer.

Mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through an opening. The semiconductor device further includes a post-passivation interconnect layer over the passivation layer and coupled to the second portion of the contact pad. In addition, the semiconductor device includes a bump over the post-passivation interconnect layer and outside of the opening. The semiconductor device also includes a diffusion barrier layer physically insulating the bump from the post-passivation interconnect layer while electrically connecting the bump to the post-passivation interconnect layer.

It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.

Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.