A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

A semiconductor device is provided that includes a dielectric layer, a bond pad, a passivation layer and a planar barrier. The bond pad is positioned in the dielectric layer. The passivation layer is positioned over the dielectric layer and has an opening over the bond pad. The planar barrier is positioned on the bond pad.

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.

According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one contact pad being in physical contact with the dielectric layer structure; the at least one contact pad including a metal structure and a liner structure, wherein the liner structure is disposed between the metal structure of the at least one contact pad and the dielectric layer structure, and wherein a surface of the at least one contact pad is at least partially free from the liner structure, and a contact structure including an electrically conductive material; the contact structure completely covering at least the surface being at least partially free from the liner structure of the at least one contact pad, wherein the liner structure and the contact structure form a diffusion barrier for a material of the metal structure of the at least one contact pad.

According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one contact pad being in physical contact with the dielectric layer structure; the at least one contact pad including a metal structure and a liner structure, wherein the liner structure is disposed between the metal structure of the at least one contact pad and the dielectric layer structure, and wherein a surface of the at least one contact pad is at least partially free from the liner structure, and a contact structure including an electrically conductive material; the contact structure completely covering at least the surface being at least partially free from the liner structure of the at least one contact pad, wherein the liner structure and the contact structure form a diffusion barrier for a material of the metal structure of the at least one contact pad.

A semiconductor device has a first conductive layer including a plurality of conductive traces. The first conductive layer is formed over a substrate. The conductive traces are formed with a narrow pitch. A first semiconductor die and second semiconductor die are disposed over the first conductive layer. A first encapsulant is deposited over the first and second semiconductor die. The substrate is removed. A second encapsulant is deposited over the first encapsulant. A build-up interconnect structure is formed over the first conductive layer and second encapsulant. The build-up interconnect structure includes a second conductive layer. A first passive device is disposed in the first encapsulant. A second passive device is disposed in the second encapsulant. A vertical interconnect unit is disposed in the second encapsulant. A third conductive layer is formed over second encapsulant and electrically connected to the build-up interconnect structure via the vertical interconnect unit.

A semiconductor device has a first conductive layer including a plurality of conductive traces. The first conductive layer is formed over a substrate. The conductive traces are formed with a narrow pitch. A first semiconductor die and second semiconductor die are disposed over the first conductive layer. A first encapsulant is deposited over the first and second semiconductor die. The substrate is removed. A second encapsulant is deposited over the first encapsulant. A build-up interconnect structure is formed over the first conductive layer and second encapsulant. The build-up interconnect structure includes a second conductive layer. A first passive device is disposed in the first encapsulant. A second passive device is disposed in the second encapsulant. A vertical interconnect unit is disposed in the second encapsulant. A third conductive layer is formed over second encapsulant and electrically connected to the build-up interconnect structure via the vertical interconnect unit.