Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.

A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.

A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.

A semiconductor device includes a first conductive pattern at an upper portion of a first insulating interlayer on a first substrate, a first plurality of conductive nanotubes (CNTs) extending vertically, a second conductive pattern at a lower portion of a second insulating interlayer beneath a second substrate, and a second plurality of CNTs extending vertically. A lower surface of the second insulating interlayer contacts an upper surface of the first insulating interlayer. At least a portion of a sidewall of each of the first plurality of CNTs is covered by the first conductive pattern, and at least a portion of a sidewall of each of the second plurality of CNTs is covered by the second conductive pattern. The first and second conductive patterns vertically face each other, and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs contact each other.

A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

A semiconductor device includes a bonding pad that includes a base portion having a base layer. A bond wire or clip is bonded to a bonding region of a main surface of the bonding pad. A supplemental structure is in direct contact with the base portion next to the bonding region. A specific heat capacity of the supplemental structure is higher than a specific heat capacity of the base layer.

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

A wafer chip-scale package (WCSP) includes a substrate including a semiconductor surface layer including circuitry configured for at least one function having at least a top metal interconnect layer thereon that includes at least one bond pad coupled to a node in the circuitry. A redistribution layer (RDL) including a bump pad is coupled by a trace to metal filled plugs through a passivation layer to the bond pad. A solder ball is on the bump pad, and a dielectric ring is on the bump pad that has an inner area that is in physical contact with the solder ball.

In some embodiments, an integrated chip (IC) is provided. The IC includes a metallization structure disposed over a semiconductor substrate, where the metallization structure includes an interconnect structure disposed in an interlayer dielectric (ILD) structure. A passivation layer is disposed over the metallization structure, where an upper surface of the interconnect structure is at least partially disposed between opposite inner sidewalls of the passivation layer. A sidewall spacer is disposed along the opposite inner sidewalls of the passivation layer, where the sidewall spacer has rounded sidewalls. A conductive structure is disposed on the passivation layer, the rounded sidewalls of the sidewall spacer, and the upper surface of the interconnect structure.