Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

Wafers include multiple bulk redistribution layers. A contact pad is formed on a surface of one of the bulk redistribution layers. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Provided is a die structure including a die, a bonding structure, and a protection structure. The die includes a substrate and a metal feature disposed over the substrate. The bonding structure is disposed over the die. The bonding structure includes a bonding dielectric layer and a bonding metal layer disposed in the bonding dielectric layer. The bonding metal layer is electrically connected to the metal feature of the die. The protection structure is disposed between a top portion of the bonding metal layer and a top portion of the bonding dielectric layer. A die stack structure and a method of fabricating the die structure are also provided.

Provided is a die structure including a die, a bonding structure, and a protection structure. The die includes a substrate and a metal feature disposed over the substrate. The bonding structure is disposed over the die. The bonding structure includes a bonding dielectric layer and a bonding metal layer disposed in the bonding dielectric layer. The bonding metal layer is electrically connected to the metal feature of the die. The protection structure is disposed between a top portion of the bonding metal layer and a top portion of the bonding dielectric layer. A die stack structure and a method of fabricating the die structure are also provided.

Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.

A method of making a semiconductor structure includes forming a first contact pad over an interconnect structure. The method further includes forming a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The method further includes depositing a first buffer layer over the interconnect structure, wherein the first buffer layer partially covers the second contact pad, and an edge of the second contact pad extends beyond the first buffer layer.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.