A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.

A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150 C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150 C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

Three-dimensional memory devices in the form of a memory die includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack, in which each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Bit lines are electrically connected to an end portion of a respective one of the vertical semiconductor channels. Bump connection via structures contact a top surface of a respective one of the bit lines, in which each of the bump connection via structures has a greater lateral dimension along a lengthwise direction of the bit lines than along a widthwise direction of the bit lines. Metallic bump structures of another semiconductor die contact respective ones of the bump connection via structures to make respective electrical connections between the two dies.

Three-dimensional memory devices in the form of a memory die includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack, in which each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Bit lines are electrically connected to an end portion of a respective one of the vertical semiconductor channels. Bump connection via structures contact a top surface of a respective one of the bit lines, in which each of the bump connection via structures has a greater lateral dimension along a lengthwise direction of the bit lines than along a widthwise direction of the bit lines. Metallic bump structures of another semiconductor die contact respective ones of the bump connection via structures to make respective electrical connections between the two dies.

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 m. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 m. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.

A method of making a semiconductor device includes patterning a conductive layer over a substrate to define a conductive pad having a first width. The method includes depositing a passivation layer, wherein the passivation layer directly contacts the conductive pad. The method includes depositing a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The method includes depositing an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The method includes depositing a mask layer over the UBM layer; and forming an opening in the mask layer wherein the opening has the second width. The method includes forming a conductive pillar in the opening on the UBM layer; and etching the UBM layer using the conductive pillar as a mask, wherein the etched UBM layer has the second width.

A method of making a semiconductor device includes patterning a conductive layer over a substrate to define a conductive pad having a first width. The method includes depositing a passivation layer, wherein the passivation layer directly contacts the conductive pad. The method includes depositing a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The method includes depositing an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The method includes depositing a mask layer over the UBM layer; and forming an opening in the mask layer wherein the opening has the second width. The method includes forming a conductive pillar in the opening on the UBM layer; and etching the UBM layer using the conductive pillar as a mask, wherein the etched UBM layer has the second width.