A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 m. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 m. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 m. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 m. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.

In examples, a semiconductor die comprises a semiconductor substrate having a surface, the surface having first and second surface portions, and a radiator layer on the surface. The radiator layer comprises a metal member having a first metal member portion above the first surface portion and a second metal member portion above the second surface portion, a first distance between the first metal member portion and the first surface portion, and a second distance between the second metal member portion and the second surface portion, the first distance less than the second distance. The radiator layer includes first and second electrodes. The radiator layer includes a piezoelectric layer extending along a length of the radiator layer and on each of the first and second electrodes, the piezoelectric layer between the first and second metal members and the semiconductor substrate.

A packaging assembly includes a semiconductor device. The semiconductor device includes a conductive pad having a first width, and an under-bump metallization (UBM) layer on the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device further includes a conductive pillar on the UBM layer, and a cap layer over the conductive pillar, wherein the cap layer exposes sidewalls of the UBM layer. The packaging assembly further includes a substrate. The substrate includes a conductive region, and a mask layer overlying the substrate and exposing a portion of the conductive region. The packaging assembly further includes a joint solder structure between the conductive pillar and the conductive region.

A packaging assembly includes a semiconductor device. The semiconductor device includes a conductive pad having a first width, and an under-bump metallization (UBM) layer on the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device further includes a conductive pillar on the UBM layer, and a cap layer over the conductive pillar, wherein the cap layer exposes sidewalls of the UBM layer. The packaging assembly further includes a substrate. The substrate includes a conductive region, and a mask layer overlying the substrate and exposing a portion of the conductive region. The packaging assembly further includes a joint solder structure between the conductive pillar and the conductive region.

Provided is a thermally conductive film-like adhesive capable of sufficiently advancing a curing reaction under milder conditions, capable of effectively suppressing residual voids between the adhesive and a wiring board in a semiconductor package to be obtained when used as a die attach film, and capable of obtaining a semiconductor package excellent in heat releasing property inside the package. In addition, provided are a semiconductor package using the thermally conductive film-like adhesive and a method of producing the same.

A method of forming a semiconductor structure having a first substrate capable of electrically and mechanically connecting to a second substrate includes providing a first substrate without a solder bump. A solder bump receiving metal is formed over a top interconnect metal of the first substrate. The solder bump receiving metal may include platinum, a platinum alloy, nickel, or a nickel alloy. A passivation layer is formed, wherein the passivation layer is not situated under any portion of the solder bump receiving metal. A window is formed exposing a portion of the solder bump receiving metal. The method may further include providing a second substrate with a second substrate solder bump. The second substrate solder bump may be mechanically and electrically connecting to the exposed portion of the solder bump receiving metal of the first substrate.

Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.