A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

A wafer level package device, electronic device, and fabrication methods for fabrication of the wafer level package device are described that include forming an exposed lead tip on the wafer level package for providing a solder buttress structure when coupling the wafer level package device to another electrical component. In implementations, the wafer level package device includes at least one integrated circuit die, a metal pad, a first dielectric layer, a redistribution layer, a second dielectric layer, a pillar structure, a molding layer, a pillar layer, and a plating layer, where the pillar layer is sawn to form pad contacts on at least two sides of the wafer level package device. The exposed pad contact facilitate a solder fillet and buttress structure resulting in improved board level reliability.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

Structures, methods and devices are disclosed, related to improved stack structures in electronic devices. In some embodiments, a stack structure includes a pad implemented on a substrate, the pad including a polymer layer having a side that forms an interface with another layer of the pad, the pad further including an upper metal layer over the interface, the upper metal layer having an upper surface. In some embodiments, the stack structure also includes a passivation layer implemented over the upper metal layer, the passivation layer including a pattern configured to provide a compressive force on the upper metal layer to thereby reduce the likelihood of delamination at the interface, the pattern defining a plurality of openings to expose the upper surface of the upper metal layer.

Structures, methods and devices are disclosed, related to improved stack structures in electronic devices. In some embodiments, a stack structure includes a pad implemented on a substrate, the pad including a polymer layer having a side that forms an interface with another layer of the pad, the pad further including an upper metal layer over the interface, the upper metal layer having an upper surface. In some embodiments, the stack structure also includes a passivation layer implemented over the upper metal layer, the passivation layer including a pattern configured to provide a compressive force on the upper metal layer to thereby reduce the likelihood of delamination at the interface, the pattern defining a plurality of openings to expose the upper surface of the upper metal layer.

A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.