Some implementations herein include a semiconductor die and methods of formation. The semiconductor die includes an array of interconnect pad structures, including interconnect pad structures having surfaces located within an overlay region of an active device area of the semiconductor die. As part of manufacturing the semiconductor die, temporary conductive structures are formed across the overlay region to support wafer acceptance testing and/or circuit probe testing process. Forming the temporary conductive structures includes using an anti-reflective coating layer having a composition that enables the temporary conductive structures to be formed using a single etch cycle. Relative to other semiconductor dies manufactured using temporary conductive structures formed using an anti-reflective coating layer having another composition (and that may require multiple etch cycles), the semiconductor die includes a reduced difference in step heights between interconnect pad structures in the overlay region and other regions of the active device area.

An electronic substrate and an electronic device are provided. The electronic substrate includes a base, a conductive electrode, and a first layer. The conductive electrode and the first layer are disposed on the base, the first layer surrounds the conductive electrode and overlaps an edge portion of the conductive electrode. In a cross-sectional view, the first layer is divided into a first part and a second part, the conductive electrode is located between the first part and the second part, and a width of the first part is different from a width of the second part.

An electronic substrate and an electronic device are provided. The electronic substrate includes a base, a conductive electrode, and a first layer. The conductive electrode and the first layer are disposed on the base, the first layer surrounds the conductive electrode and overlaps an edge portion of the conductive electrode. In a cross-sectional view, the first layer is divided into a first part and a second part, the conductive electrode is located between the first part and the second part, and a width of the first part is different from a width of the second part.