A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.

Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.

Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.

A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.

A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.

A circuit assembly includes an integrated circuit (IC) die and a first capacitor die. The IC die provides an IC and includes a plurality of first conductive pads. The first capacitor die provides a plurality of capacitors, and includes a plurality of second conductive pads at the first side and a plurality of conductive vias at the second side. At least one of the second conductive pads electrically connects to the capacitors. The conductive vias is adapted to form a plurality of external signal connections of the IC die and the first capacitor die. The IC die is stacked with the first capacitor die in such a way that the first conductive pads electrically connect to the second conductive pads, and surfaces of the IC die and the first capacitor die attaching to each other are substantially of the same size.

A circuit assembly includes an integrated circuit (IC) die and a first capacitor die. The IC die provides an IC and includes a plurality of first conductive pads. The first capacitor die provides a plurality of capacitors, and includes a plurality of second conductive pads at the first side and a plurality of conductive vias at the second side. At least one of the second conductive pads electrically connects to the capacitors. The conductive vias is adapted to form a plurality of external signal connections of the IC die and the first capacitor die. The IC die is stacked with the first capacitor die in such a way that the first conductive pads electrically connect to the second conductive pads, and surfaces of the IC die and the first capacitor die attaching to each other are substantially of the same size.

A packaged semiconductor device includes a wiring substrate with a bonding pad on a first surface, a wiring layer, a first conductive plug extending through the wiring substrate from the wiring layer to the first surface, a second conductive plug extending through the wiring substrate from the wiring layer to a second surface, and a third conductive plug extending through the wiring substrate from the wiring layer to the second surface. A semiconductor chip is mounted on the first surface and has a pad terminal electrically connected to the bonding pad. A first solder ball is on the second surface of the wiring substrate and electrically connected to the second conductive plug. A second solder ball is on the second surface of the wiring substrate and electrically connected to the third conductive plug.

A packaged semiconductor device includes a wiring substrate with a bonding pad on a first surface, a wiring layer, a first conductive plug extending through the wiring substrate from the wiring layer to the first surface, a second conductive plug extending through the wiring substrate from the wiring layer to a second surface, and a third conductive plug extending through the wiring substrate from the wiring layer to the second surface. A semiconductor chip is mounted on the first surface and has a pad terminal electrically connected to the bonding pad. A first solder ball is on the second surface of the wiring substrate and electrically connected to the second conductive plug. A second solder ball is on the second surface of the wiring substrate and electrically connected to the third conductive plug.