Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.

An array substrate includes a base substrate, a driving circuit layer, and a functional device layer which are sequentially stacked; the driving circuit layer is provided with first driving circuits, and each first driving circuit at least comprises a driving transistor; and the driving circuit layer comprises a first gate layer, a first gate insulation layer, a semiconductor layer, a second gate insulation layer, a second gate layer, an interlayer dielectric layer, and a source-drain metal layer which are sequentially stacked on one side of the base substrate.

A light emitting element includes: a substrate; a first emission part and a second emission part disposed on the substrate, each comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer positioned between the first semiconductor layer and the second semiconductor layer; an insulation layer covering the first emission part and the second emission part and including: a plurality of first openings that includes multiple first openings located above the first semiconductor layer of the first emission part and multiple first openings located above the first semiconductor layer of the second emission part, and a plurality of second openings that include at least one second opening located above the second semiconductor layer of the first emission part and at least one second opening located above the second semiconductor layer of the second emission part.

A packaged semiconductor die includes a semiconductor die coupled to a die pad. The semiconductor die has a front side containing copper leads, a copper seed layer coupled to the copper leads, and a nickel alloy coating coupled to the copper seed layer. The nickel alloy includes tungsten and cerium (NiWCe). The packaged semiconductor die may also include wire bonds coupled between leads of a lead frame and the copper leads of the semiconductor die. In addition, the packaged semiconductor die may be encapsulated in molding compound. A method for fabricating a packaged semiconductor die. The method includes forming a copper seed layer over the copper leads of the semiconductor die. In addition, the method includes coating the copper seed layer with a nickel alloy. The method also includes singulating the semiconductor wafer to create individual semiconductor die and placing the semiconductor die onto a die pad of a lead frame.

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes: providing a first wafer including a substrate; forming a hole in the first wafer, which extends through the substrate; forming an insulating dielectric layer over a side wall of the hole; filling the hole with a conductive layer; removing at least part of the insulating dielectric layer situated in correspondence with the substrate, forming an air gap between the conductive layer and the substrate; and forming a closure layer, which closes the air gap. With the present invention, parasitic capacitance present between the conductive layer, the insulating dielectric layer and the substrate is significantly reduced, resulting in an improvement in performance of the semiconductor device.

A device is provided. The device includes one or more of a singular die, one of another die, a printed circuit board, and a substrate, and one or more solder balls. The singular die includes one or more reconditioned die pads, which include die pads of the singular die with a plurality of metallic layers applied. The other die, printed circuit board, and the substrate include one or more bond pads. The one or more solder balls are between the one or more reconditioned die pads and the one or more bond pads.

An array substrate has a display area and a bonding area located on a side of the display area. The array substrate includes a base, a plurality of first transistors, a plurality of conductive pins and a plurality of conductive electrodes. The plurality of first transistors are disposed on a side of the base and located in the display area; a first transistor includes a first gate, a first source and a first drain. The plurality of conductive pins are disposed on the side of the base and located in the bonding area, and are disposed in a same layer as the first gate. The plurality of conductive electrodes are each disposed on a respective one of surfaces of the plurality of conductive pins away from the base.

An electronic device has a conductive shield between first and second regions in a multilevel metallization structure, as well as a capacitor with first and second terminals in the first region, the first terminal laterally overlaps the second terminal by an overlap distance of 1.0 μm to 6.0 μm, the conductive shield includes a first metal line that encircles the first terminal, and the first metal line is spaced apart from the first terminal by a gap distance of 0.5 μm to 1.0 μm.

A wafer includes a substrate and conductive bumps on a surface of the substrate. In a plan view from a direction perpendicular to the surface of the substrate, the area density of the conductive bumps is higher in a first area than in a second area around the first area in the surface of the substrate. The first area has effective chip areas arranged therein.